NH 1N5397 DO15 general purpose diode offering high forward surge current and low forward voltage drop
Key Attributes
Model Number:
1N5397(DO-15)
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA@600V
Operating Junction Temperature Range:
-55℃~+150℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
600V
Voltage - Forward(Vf@If):
1V@1.5A
Current - Rectified:
1.5A
Mfr. Part #:
1N5397(DO-15)
Package:
DO-15
Product Description
Product Overview
The 1N5391 THRU 1N5399 series are general purpose rectifiers manufactured by Niu Hang Specification Electronic Co. Ltd. These glass-passivated chips feature low forward voltage drop for high efficiency and low leakage current for high reliability. They offer high forward surge capability and are suitable for low voltage, high frequency inverters, DC/DC converters, free wheeling, and polarity protection applications.
Product Attributes
- Brand: Niu Hang
- Material: Glass passivated chip
- Certifications: RoHS Compliant
- Lead Free: Yes
Technical Specifications
| Model | VRRM (V) | IF(AV) (A) | IFSM (A) | VF (V) | I2t (A2sec) | CJ (pF) | VRMS (V) |
| 1N5391 | 50 | 1.5 | 50 | 1.0 (Max) | 35 | 50 (Typ) | 35 |
| 1N5392 | 100 | 1.5 | 100 | 1.0 (Max) | 70 | 50 (Typ) | 70 |
| 1N5393 | 200 | 1.5 | 200 | 1.0 (Max) | 140 | 50 (Typ) | 140 |
| 1N5395 | 400 | 1.5 | 400 | 1.0 (Max) | 280 | 50 (Typ) | 280 |
| 1N5397 | 600 | 1.5 | 600 | 1.0 (Max) | 420 | 50 (Typ) | 420 |
| 1N5398 | 800 | 1.5 | 800 | 1.0 (Max) | 560 | 50 (Typ) | 560 |
| 1N5399 | 1000 | 1.5 | 1000 | 1.0 (Max) | 700 | 50 (Typ) | 700 |
2410121747_NH-1N5397-DO-15_C7428233.pdf
Related Products
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
