Power Rectification NH MBR10100CT Schottky Rectifier Suitable for Resistive and Inductive Loads
Key Attributes
Model Number:
MBR10100CT
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
150A
Reverse Leakage Current (Ir):
10uA@100V
Operating Junction Temperature Range:
-85℃~+150℃
Voltage - DC Reverse (Vr) (Max):
100V
Voltage - Forward(Vf@If):
950mV@5A
Current - Rectified:
10A
Mfr. Part #:
MBR10100CT
Package:
TO-220AB
Product Description
Niuhang Electronic MBR10100CT/MBR10100FCT Schottky Rectifiers
The Niuhang MBR10100CT and MBR10100FCT are high-performance Schottky rectifiers designed for demanding applications. Featuring a planar Schottky barrier chip, these rectifiers offer low forward voltage drop for enhanced efficiency, low leakage current for improved reliability, and high forward surge capability. They are ideal for use in high-frequency inverters, switching mode power supplies, AC/DC converters, and LED drivers, supporting single-phase, half-wave rectification with resistive or inductive loads.
Product Attributes
- Brand: Niuhang Electronic
- Origin: China
- Certifications: RoHS-Compliant, UL 94 V-0 Flammability Rating
- Material: Molding Compound
Technical Specifications
| Parameter | Test Conditions | Symbol | MBR10100CT, MBR10100FCT | Unit |
|---|---|---|---|---|
| Reverse Voltage | Maximum Repetitive Peak | VRRM | 100 | V |
| Maximum RMS | VRMS | 70 | V | |
| Maximum DC Blocking | VDC | 100 | V | |
| Average Forward Rectified Current | @TC= 100 C | IF(AV) | 10 | A |
| Peak Forward Surge Current | 8.3ms Single Half Sine-wave | IFSM | 150 | A |
| Current Squared Time Per Diode | t<8.3ms | I2t | 93.4 | A2sec |
| Maximum Mounting torque | M3 screw | TMM | 1.1 | N.m |
| Instantaneous forward voltage per diode (note1) | Ta=25, IF= 5.0 A | VF | 0.79 - 0.95 | V |
| Ta=125 | VF | 0.70 - 0.85 | V | |
| Maximum DC Reverse Current at Rated DC Blocking Voltage (Note 1) | Ta=25, VR= VRRM | IRRM | -- 1 - 10 | uA |
| Ta=125, VR= 80%*VRRM | IRRM | -- 1 - 5 | mA | |
| Typical Junction Capacitance Per Diode | 4.0 V, 1MHz | CJ | -- 200 -- | pF |
| Operating Junction Temperature Range | TJ | -55 to 150 | ||
| Storage Temperature Range | TSTD | -55 to 150 | ||
| Typical thermal resistance | TO-220AB | JC | 2.5 | /W |
| TO-220F | JC | 4.5 | /W |
2505061659_NH-MBR10100CT_C7428022.pdf
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