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quality Switching Performance ORIENTAL SEMI OSG65R580FF MOSFET with Reduced Gate Charge and Low On Resistance factory
quality Switching Performance ORIENTAL SEMI OSG65R580FF MOSFET with Reduced Gate Charge and Low On Resistance factory

Switching Performance ORIENTAL SEMI OSG65R580FF MOSFET with Reduced Gate Charge and Low On Resistance

Key Attributes
Model Number: OSG65R580FF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
8A
RDS(on):
580mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
1.47pF
Output Capacitance(Coss):
38.3pF
Pd - Power Dissipation:
28W
Input Capacitance(Ciss):
464pF
Gate Charge(Qg):
9.5nC@10V
Mfr. Part #:
OSG65R580FF
Package:
TO-220F
Product Description

Product Overview

The OSG65R580FF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS series. It leverages charge balance technology to deliver exceptional low on-resistance and reduced gate charge, minimizing conduction and switching losses. This MOSFET is engineered for superior switching performance, robust avalanche capability, and high power density applications, making it ideal for achieving the highest efficiency standards. It is particularly suited for demanding applications such as PC power, LED lighting, telecom power, server power, EV chargers, and solar/UPS systems.

Product Attributes

  • Brand: GreenMOS
  • Manufacturer: Oriental Semiconductor
  • Technology: Charge Balance Technology
  • Certifications: Pb Free, RoHS, Halogen Free

Technical Specifications

Parameter Symbol Value Unit Test Condition
Drain-source voltage VDS 650 V
Gate-source voltage VGS ±30 V
Continuous drain current (TC=25 °C) ID 8 A
Continuous drain current (TC=100 °C) ID 5 A
Pulsed drain current (TC=25 °C) ID, pulse 24 A
Continuous diode forward current (TC=25 °C) IS 8 A
Diode pulsed current (TC=25 °C) IS, pulse 24 A
Power dissipation (TC=25 °C) PD 28 W
Single pulsed avalanche energy EAS 150 mJ
MOSFET dv/dt ruggedness (VDS=0…480 V) dv/dt 50 V/ns
Reverse diode dv/dt (VDS=0…480 V, ISD≤ID) dv/dt 15 V/ns
Operation and storage temperature Tstg, Tj -55 to 150 °C
Thermal resistance, junction-case RθJC 4.5 °C/W
Thermal resistance, junction-ambient RθJA 62.5 °C/W
Drain-source breakdown voltage BVDSS 650 V VGS=0 V, ID=250 μA
Gate threshold voltage VGS(th) 2.0 - 4.0 V VDS=VGS, ID=250 μA
Drain-source on-state resistance RDS(ON) 0.52 - 0.58 Ω VGS=10 V, ID=4 A
Drain-source on-state resistance (Tj=150 °C) RDS(ON) 1.27 Ω VGS=10 V, ID=4 A
Gate-source leakage current IGSS ±100 nA VGS=±30 V
Drain-source leakage current IDSS 1 μA VDS=650 V, VGS=0 V
Input capacitance Ciss 464 pF VGS=0 V, VDS=50 V, ƒ=1 MHz
Output capacitance Coss 38.3 pF VGS=0 V, VDS=50 V, ƒ=1 MHz
Reverse transfer capacitance Crss 1.47 pF VGS=0 V, VDS=50 V, ƒ=1 MHz
Turn-on delay time td(on) 18 ns VGS=10 V, VDS=380 V, RG=25 Ω, ID=8 A
Rise time tr 18 ns VGS=10 V, VDS=380 V, RG=25 Ω, ID=8 A
Turn-off delay time td(off) 27 ns VGS=10 V, VDS=380 V, RG=25 Ω, ID=8 A
Fall time tf 22 ns VGS=10 V, VDS=380 V, RG=25 Ω, ID=8 A
Total gate charge Qg 9.5 nC VGS=10 V, VDS=480 V, ID=8 A
Gate-source charge Qgs 2.7 nC VGS=10 V, VDS=480 V, ID=8 A
Gate-drain charge Qgd 3.8 nC VGS=10 V, VDS=480 V, ID=8 A
Gate plateau voltage Vplateau 5.6 V VGS=10 V, VDS=480 V, ID=8 A
Diode forward voltage VSD 1.3 V IS=8 A, VGS=0 V
Reverse recovery time trr 211 ns VR=400 V, IS=8 A, di/dt=100 A/μs
Reverse recovery charge Qrr 1.8 μC VR=400 V, IS=8 A, di/dt=100 A/μs
Peak reverse recovery current Irrm 10.5 A VR=400 V, IS=8 A, di/dt=100 A/μs
Product Name OSG65R580FF TO220F
Package Marking OSG65R580F TO220F
Package Type TO220F-P Units/Tube: 50
Package Type TO220F-J Units/Tube: 50

2508181758_ORIENTAL-SEMI-OSG65R580FF_C49005840.pdf

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