Durable NH MBR10100FCT Schottky Diode Suitable for High Frequency Power Conversion Applications
Key Attributes
Model Number:
MBR10100FCT
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
150A
Reverse Leakage Current (Ir):
10uA@100V
Operating Junction Temperature Range:
-85℃~+150℃
Voltage - DC Reverse (Vr) (Max):
100V
Voltage - Forward(Vf@If):
950mV@5A
Current - Rectified:
10A
Mfr. Part #:
MBR10100FCT
Package:
ITO-220AB
Product Description
Product Overview
The MBR10100CT and MBR10100FCT are high-performance Schottky Rectifiers from Niuhang Electronic Specification Technology Co., Ltd. Featuring a Plane Schottky Potential Barrier Chip, these rectifiers offer a low forward voltage drop for high efficiency, low leakage current, and high forward surge capability for enhanced reliability. They are designed for high-frequency operation and are suitable for a wide range of applications including high-frequency inverters, switching mode power supplies, AC/DC converters, and LED drivers. These devices are available in TO-220AB and TO-220F packages.
Product Attributes
- Brand: Niuhang
- Origin: China (implied by company name and website)
- Certifications: RoHS-Compliant, UL 94 V-0 Flammability Rating
Technical Specifications
| Parameter | Symbol | MBR10100CT, MBR10100FCT | Unit | Min. | Typ. | Max. |
| Maximum Ratings | ||||||
| Maximum Repetitive Peak Reverse Voltage | VRRM | 100 | V | |||
| Maximum RMS Voltage | VRMS | 70 | V | |||
| Maximum DC Blocking Voltage | VDC | 100 | V | |||
| Maximum Average Forward Rectified Current @TC= 100 C | IF(AV) | 10 | A | |||
| Peak Forward Surge Current (8.3ms Single Half Sine-wave) | IFSM | 150 | A | |||
| Current Squared Time Per Diode (t<8.3ms) | I2t | 93.4 | A2sec | |||
| Maximum Mounting torque (M3 screw) | TMM | 1.1 | N.m | |||
| Electrical Characteristics (Ta=25 Unless otherwise specified) | ||||||
| Instaneous forward voltage per diode (Note 1) @ Ta=25, IF= 5.0 A | VF | V | 0.79 | 0.95 | ||
| Instaneous forward voltage per diode (Note 1) @ Ta=125 | VF | V | 0.70 | 0.85 | ||
| Maximum DC Reverse Current at Rated DC Blocking Voltage (Note 1) @ Ta=25, VR= VRRM | IRRM | uA | 1 | 10 | ||
| Maximum DC Reverse Current at Rated DC Blocking Voltage (Note 1) @ Ta=125, VR= 80%*VRRM | IRRM | mA | 1 | 5 | ||
| Typical Junction Capacitance Per Diode @ 4.0 V,1MHz | CJ | pF | 200 | |||
| Thermal Characteristics (Ta=25 Unless otherwise specified) | ||||||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Storage Temperature Range | TSTD | -55 | 150 | |||
| Typical thermal resistance (Note 2) TO-220AB | JC | /W | 2.5 | |||
| Typical thermal resistance (Note 2) TO-220F | JC | /W | 4.5 | |||
2505061659_NH-MBR10100FCT_C7428023.pdf
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