High Voltage Power MOSFET OSEN IRFP260NPBF 200V N Channel for Electronic Ballasts and Power Correction
Key Attributes
Model Number:
IRFP260NPBF
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-
RDS(on):
38mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
160pF
Output Capacitance(Coss):
690pF
Input Capacitance(Ciss):
4.3nF
Pd - Power Dissipation:
300W
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
IRFP260NPBF
Package:
TO-247S
Product Description
Product Overview
The IRFP260NPBF is a 200V N-CHANNEL MOSFET from OSEN, designed for high efficiency and ruggedness. It features fast switching speeds, high input impedance, low level drive, and tested avalanche energy. This MOSFET is ideal for applications such as high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameters | Unit | Conditions | Min | Typ | Max | |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | V | 200 | ||||
| Gate-Source Voltage-Continuous | V | ±20 | ||||
| Drain Current-Continuous (Note 2) | A | 50 | ||||
| Drain Current-Single Pulsed (Note 1) | A | 200 | ||||
| Power Dissipation (Note 2) | W | 300 | ||||
| Max.Operating junction temperature | °C | 150 | ||||
| Electrical Characteristics (Tc=25°C unless otherwise noted) | ||||||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage Current (Note 1) | V | ID=250µA, VGS=0V, TJ=25°C | 200 | -- | -- | |
| Gate Threshold Voltage | V | VDS=VGS, ID=250µA | 2 | -- | 4.0 | |
| Drain-Source On-Resistance | mΩ | VGS=10V, ID=25A | -- | 30 | 38 | |
| Gate-Body Leakage Current | nA | VGS=±20V, VDS=0 | -- | -- | ±100 | |
| Zero Gate Voltage Drain Current | µA | VDS=200V, VGS=0 | -- | -- | 1 | |
| Forward Transconductance | S | VDS=15V, ID=20A | -- | 65 | -- | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | ns | VDS=100V, ID=25A, RG=10Ω (Note 2) | -- | 32 | -- | |
| Rise Time | ns | -- | 35 | -- | ||
| Turn-Off Delay Time | ns | -- | 70 | -- | ||
| Fall Time | ns | -- | 20 | -- | ||
| Total Gate Charge | nC | VDS=100V , VGS=10V, ID=25A (Note 2) | -- | 45 | -- | |
| Gate-Source Charge | nC | -- | 10 | -- | ||
| Gate-Drain Charge | nC | -- | 15 | -- | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | pF | VDS=25V, VGS=0, f=1MHz | -- | 4300 | -- | |
| Output Capacitance | pF | -- | 690 | -- | ||
| Reverse Transfer Capacitance | pF | -- | 160 | -- | ||
| Diode Characteristics | ||||||
| Continuous Drain-Source Diode Forward Current (Note 2) | A | -- | -- | 50 | ||
| Diode Forward On-Voltage | V | IS=25A, VGS=0 | -- | -- | 1.4 | |
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to Case | °C/W | -- | -- | 0.42 | ||
2410121732_OSEN-IRFP260NPBF_C22458653.pdf
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