100 volt power MOSFET NH NSH045N100P5 N channel trench technology with low RDS ON resistance
Key Attributes
Model Number:
NSH045N100P5
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.5mΩ@10V,32A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
33pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
227W
Input Capacitance(Ciss):
6.772nF@50V
Gate Charge(Qg):
90nC@10V
Mfr. Part #:
NSH045N100P5
Package:
PDFN5x6-8
Product Description
Product Overview
The NSH045N100P5 is an N-channel Enhancement Mode Power MOSFET from Niu Hang, featuring advanced trench MOSFET technology for low RDS(ON) and ultra-low gate charge. This RoHS-compliant, 100V device is 100% UIS and RG tested, offering high power and current handling capabilities. It is suitable for applications such as PD Charger V-BUS, SMPS 2nd Synchronous Rectifier, MB/VGA Vcore, BLDC Motor Driver, and POL applications.
Product Attributes
- Brand: Niu Hang (NH)
- Product Line Code: FF
- Technology: Advanced trench MOSFET
- Compliance: RoHS Compliant
- Testing: 100% UIS and RG Tested
- Package Type: PDFN5*6
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | |||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,ID=250uA | 100 | - | - | V | |
| Drain-Source On Resistance | RDS(ON) | VGS=10V,ID=50A | - | 3.6 | 4.5 | m | |
| Total Gate Charge | Qg | VGS=10V, VDS=50V, ID=20A | - | 90 | - | nC | |
| Absolute Maximum Ratings | |||||||
| Drain-Source Voltage | VDS | - | - | - | 100 | V | |
| Gate-Source Voltage | VGS | - | - | - | 20 | V | |
| Continuous Drain Current | ID | Ta=25 | - | - | 120 | A | |
| Continuous Drain Current | ID | Ta=100 | - | - | 77 | A | |
| Drain Current-Pulsed | IDM | Note 1 | - | - | 480 | A | |
| Maximum Power Dissipation | PD | Ta=25 | - | - | 256 | W | |
| Power Dissipation Derating Factor | DF | above 25 | 0.55 | - | - | W/ | |
| Junction Temperature | TJ | - | -55 | - | 150 | ||
| Storage temperature range | TSTD | - | -55 | - | 150 | ||
| Avalanche Current,Single pulse | IAS | L=0.5mH, VDD=50V | - | - | 38 | A | |
| Single Pulse Avalanche Energy | EAS | L=0.5mH,IAS=38A, VDD=50V, RG=25, Starting TJ =25 | - | - | 182 | mJ | |
| Thermal Characteristcs | |||||||
| Thermal Resistance Junction to Ambient | RJA | Note 2 | - | - | 480 | /W | |
| Thermal Resistance Junction-Case | RJC | Note 2 | - | - | 4.5 | /W | |
| Electrical Characteristcs | |||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,ID=250uA | 100 | - | - | V | |
| Drain-Source Leakage Current | IDSS | VDS=80V,VGS=0V | - | 0.05 | 1 | uA | |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | 10 | 100 | nA | |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS,ID=250uA | 2.0 | 3.0 | 4.0 | V | |
| Drain-Source On Resistance | RDS(ON) | VGS=10V,ID=50A | - | 3.6 | 4.5 | m | |
| Forward Transconductance | gFS | VDS=5V,ID=50A | - | 50 | - | S | |
| Input Capacitance | Ciss | VGS=10V, VDS=50V, RG_ext=3.0, f=1.0MHz | - | 77 | - | 72 | pF |
| Output Capacitance | Coss | VDS=50V,VGS=0V, f=1.0MHz | - | 95 | - | 2 | pF |
| Reverse Transfer Capacitance | Crss | VDS=50V,VGS=0V, f=1.0MHz | - | 33 | - | - | pF |
| Turn-On Delay Time | td(on) | VGS=10V, VDD=50V, ID=20A, f=1MHz | - | 28 | - | ns | |
| Turn-On Rise Time | tr | VGS=10V, VDD=50V, ID=20A, f=1MHz | - | 32 | - | ns | |
| Turn-Off Delay Time | td(off) | VGS=10V, VDD=50V, ID=20A, f=1MHz | - | 48 | - | ns | |
| Turn-Off Rise Time | tf | VGS=10V, VDD=50V, ID=20A, f=1MHz | - | 27 | - | ns | |
| Gate Resistance | Rg | VGS=0V,IS=50A | - | 2.0 | - | ||
| Total Gate Charge | Qg | VGS=10V, VDS=50V, ID=20A | - | 90 | - | nC | |
| Gate-Source Charge | Qgs | VGS=10V, VDS=50V, ID=20A | - | 28.0 | - | nC | |
| Gate-Drain Charge | Qgd | VGS=10V, VDS=50V, ID=20A | - | 19.0 | - | nC | |
| Max. Diode Forward Cuurent | ISD | - | - | - | 120 | A | |
| Max. Pulsed Forward Cuurent | ISM | - | - | - | 480 | A | |
| Diode Forward Voltage | VSD | IF=50A,di/dt=100A/us | - | 0.89 | 1.3 | V | |
| Reverse Recovery Time | trr | VSD=50V,VGS=0V, f=1.0MHz | - | 80 | - | ns | |
| Reverse Recovery Charge | Qrr | IF=50A,di/dt=100A/us | - | 190 | - | C | |
| OUTLINE DRAWINGS PDFN5*6 | |||||||
| Dim. | Milimeters | Inches | Milimeters | Inches | Milimeters | Inches | |
| A | 4.800 | 0.189 | 5.650 | 0.222 | 5.900 | 0.232 | |
| B | 0.900 | 0.035 | - | - | - | - | |
| C | - | - | 1.270 | 0.050 | - | - | |
| D | 0.250 | 0.010 | 0.700 | 0.028 | - | - | |
| E | - | - | 2.200 | 0.087 | - | - | |
| F | - | - | 3.300 | 0.130 | - | - | |
| G | - | - | 4.500 | 0.177 | - | - | |
| H | 0.100 | 0.004 | - | - | - | - | |
| J | - | - | 0.254 | 0.010 | - | - | |
| K | R0.1 | R0.0039 | - | - | - | - | |
| L | 4.000 | 0.157 | 1.270 | 0.050 | - | - | |
| M | 3.450 | 0.136 | 0.600 | 0.024 | - | - | |
| N | 1.350 | 0.053 | 4.400 | 0.173 | - | - | |
| P | 0.550 | 0.022 | - | - | - | - | |
| R | 0.1 | 0.004 | - | - | - | - | |
| PACKING INFORMATION | |||||||
| Package Method | Reel Size (mm) | Quantity (pcs/reel) | Inner Box Size LWH(mm) | Quantity (pcs/Inner Box) | Outer Carton Size LWH(mm) | Quantity (pcs/carton) | |
| 340 | 5000 | 34034050 | 10000 | 360360260 | - | ||
2410121853_NH-NSH045N100P5_C7427700.pdf
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