Power MOSFET NH NVT100N10C N Channel Enhancement Mode Trench Device for Switching Applications
Key Attributes
Model Number:
NVT100N10C
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
90A
RDS(on):
10mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Pd - Power Dissipation:
83W
Input Capacitance(Ciss):
1.921nF@50V
Gate Charge(Qg):
40nC@50V
Mfr. Part #:
NVT100N10C
Package:
TO-220C
Product Description
Product Overview
The NVT100N10C from Guangdong Niuhang Specification Electronic Technology Co., Ltd. is an N-Channel Enhancement Mode Trench Power MOSFET designed for high-efficiency and high-speed switching applications. It features low RDS(ON) for reduced power loss, low gate charge for faster switching, and high EAS for enhanced reliability. This MOSFET is 100% UIS and RG tested, making it suitable for demanding applications such as DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, and printed circuit board control. It is also noted for its suitability in automotive electronics and UPS (Uninterruptible Power Supplies).
Product Attributes
- Brand: Niuhang (NH)
- Model ID: NVT100N10C
- Package: TO-220C
- Certifications: RoHS COMPLIANT
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | @Tj | VDS | 100 | -- | -- | V |
| Continuous Drain Current | @Ta | ID | 90 | -- | -- | A |
| RDS(ON) Type | @10V | RDS(ON) | -- | 7.50 | 10.00 | m |
| Absolute Maximum Ratings | (Ta=25 Unless Otherwise Specified) | |||||
| Drain-Source Voltage | VDS | -- | -- | 100 | V | |
| Gate-Source Voltage | VGS | -- | -- | 20 | V | |
| Continuous Drain Current (Note 1) | Ta= 25 | ID | -- | -- | 90 | A |
| Continuous Drain Current (Note 1) | Ta= 100 | ID | -- | -- | 58 | A |
| Drain Current-Pulsed (Note 1) | TJ< 150 | IDM | -- | -- | 360 | A |
| Maximum Power Dissipation | Ta= 25 | PD | -- | -- | 83 | W |
| Maximum Power Dissipation | Ta= 100 | PD | -- | -- | 33 | W |
| Power Dissipation Derating Factor | Above 25 | DF | -- | 0.67 | -- | W/ |
| Junction Temperature | TJ | -55 | -- | 150 | ||
| Storage Temperature Range | TSTD | -55 | -- | 150 | ||
| Avalanche Current,Single Pulse (Note 1) | L= 0.5 mH | IAS | -- | -- | 16 | A |
| Single Pulse Avalanche Energy (Note 1) | L= 0.5 mH,VDD= 50 V | EAS | -- | -- | 64 | mJ |
| Thermal Characteristics | (Ta=25 Unless Otherwise Specified) | |||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | -- | 62.5 | -- | /W |
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | -- | 1.5 | -- | /W |
| Electrical Characteristics | (Ta=25 Unless Otherwise Specified) | |||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 100 | -- | -- | V |
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | -- | 0.114 | -- | V/ |
| Drain-Source Leakage Current | VDS= 100 V,VGS=0V | I DSS | -- | -- | 1 | uA |
| Gate-Body Leakage Current | VGS= 20 V,VDS=0V | I GSS | -- | -- | 100 | nA |
| Forward Transconductance | ID= 20 A,VDS= 5 V | gfs | -- | 23 | -- | S |
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 1.0 | 2.0 | 3.0 | V |
| Drain-Source On Resistance | ID= 20 A,VGS= 10 V | R DS(ON) | -- | 7.50 | 10.00 | m |
| Drain-Source On Resistance | ID= 20 A,VGS= 4.5 V | R DS(ON) | -- | 8.63 | 13.40 | m |
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | -- | 1.00 | -- | |
| Input Capacitance | VDS= 50 V | C iss | -- | 1921.0 | -- | pF |
| Output Capacitance | VGS= 0 V | C oss | -- | 500.0 | -- | pF |
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | -- | 35.0 | -- | pF |
| Turn-On Delay Time | VDS= 50 V | t d(on) | -- | 9.4 | -- | ns |
| Turn-On Rise Time | VGS= 10 V | t r | -- | 17.3 | -- | ns |
| Turn-Off Delay Time | RL= 1.2 | t d(off) | -- | 32.0 | -- | ns |
| Turn-Off Rise Time | RG= 10 | t f | -- | 74.0 | -- | ns |
| Total Gate Charge | VDS= 50 V | Q g | -- | 40.0 | -- | nC |
| Gate-Source Charge | VGS= 10 V | Q gs | -- | 9.0 | -- | nC |
| Gate-Drain Charge | ID= 20 A | Q gd | -- | 10.0 | -- | nC |
| Max. Diode Forward Current | I S | -- | -- | 90 | A | |
| Max. Pulsed Forward Current | I SM | -- | -- | 315 | A | |
| Diode Forward Voltage | ID= 20 A,VGS=0V | V SD | -- | 0.80 | 1.1 | V |
| Reverse Recovery Time | ID= 20 A,di/dt= 100 A/us | t rr | -- | 37.2 | -- | ns |
| Reverse Recovery Charge | VGS= 10 V,VDS= 50 V | Q rr | -- | 34.0 | -- | uC |
| Weight | App. 2.057 | (0.07255 | Gram/Ounce) | |||
| Outline Dimensions | (TO-220C) | |||||
| Dim. | Millimeters | Inches | ||||
| A | 9.50 - 10.50 | 0.37 - 0.41 | ||||
| B | 1.10 - 1.65 | 0.04 - 0.06 | ||||
| C | 4.15 - 4.95 | 0.16 - 0.19 | ||||
| D | 0.25 - 0.65 | 0.01 - 0.03 | ||||
| E | 14.50 - 16.70 | 0.57 - 0.66 | ||||
| F | 8.40 - 9.95 | 0.33 - 0.39 | ||||
| G | 12.15 - 14.30 | 0.48 - 0.56 | ||||
| H | 3.00 - 3.80 | 0.12 - 0.15 | ||||
| J | 1.05 - 1.60 | 0.04 - 0.06 | ||||
| K | 0.65 - 0.95 | 0.03 - 0.04 | ||||
| M | 2.10 - 2.90 | 0.08 - 0.11 | ||||
| O | 3.20 - 4.10 | 0.13 - 0.16 | ||||
| P | 2.45 - 3.10 | 0.10 - 0.12 |
2411070957_NH-NVT100N10C_C41784121.pdf
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