switching OSEN OSP18N20 200V N channel MOSFET with high drain current and low gate threshold voltage
Key Attributes
Model Number:
OSP18N20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
18A
RDS(on):
200mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
30pF
Input Capacitance(Ciss):
1.1nF
Output Capacitance(Coss):
180pF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
OSP18N20
Package:
TO-220
Product Description
Product Overview
The OSP18N20 is a 200V N-Channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance with low-level drive capability, and improved dv/dt capability for enhanced ruggedness. Tested for avalanche energy, this MOSFET is suitable for high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Origin: China
- Product Order Number: OSP18N20
- Revision: Rev 21.2.10
- Package: TO-220
Technical Specifications
| Symbol | Parameters | Ratings | Unit | Conditions |
| VDSS | Drain-Source Voltage | 200 | V | |
| VGS | Gate-Source Voltage-Continuous | ±20 | V | |
| ID | Drain Current-Continuous | 18 | A | (Note 2) |
| IDM | Drain Current-Single Plused | 72 | A | (Note 1) |
| PD | Power Dissipation | 125 | W | (Note 2) |
| Tj Max. | Operating junction temperature | 150 | ||
| BVDSS | Drain-Source Breakdown Voltage | 200 | V | ID=250µA, VGS=0V, TJ=25°C (Note 1) |
| VGS(th) | Gate Threshold Voltage | 2.0 - 4.0 | V | VDS=VGS, ID=250µA |
| RDS(on) | Drain-Source On-Resistance | 0.15 - 0.20 | Ω | VGS=10V, ID=9A |
| IGSS | Gate-Body Leakage Current | ±100 | nA | VGS=±20V, VDS=0 |
| IDSS | Zero Gate Voltage Drain Current | 1 | µA | VDS=200V, VGS=0 |
| gfs | Forward Transconductance | 3 - 4 | S | VDS=25V, ID=5A |
| Td(on) | Turn-On Delay Time | 11 | ns | VDS=100V, ID=18A, RG=2.5Ω,VGS=10V (Note 2) |
| Tr | Rise Time | 33 | ns | |
| Td(off) | Turn-Off Delay Time | 25 | ns | |
| Tf | Fall Time | 7 | ns | |
| Qg | Total Gate Charge | 25 | nC | VDS=100V, VGS=10V, ID=18A (Note 2) |
| Qgs | Gate-Source Charge | 7.5 | nC | |
| Qgd | Gate-Drain Charge | 9.5 | nC | |
| Ciss | Input Capacitance | 1100 | pF | VDS=25V, VGS=0, f=1MHz |
| Coss | Output Capacitance | 180 | pF | |
| Crss | Reverse Transfer Capacitance | 30 | pF | |
| IS | Continuous Drain-Source Diode Forward Current | 18 | A | (Note 2) |
| VSD | Diode Forward On-Voltage | 1.4 | V | IS=9A, VGS=0 |
| Rth(j-c) | Thermal Resistance, Junction to Case | 1.0 | Ω/W |
2410121732_OSEN-OSP18N20_C20607805.pdf
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