N-Channel Enhancement Mode MOSFET NH NTS036N03P5 with Low Gate Charge and High Reliability Features
Key Attributes
Model Number:
NTS036N03P5
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
120A
RDS(on):
4.6mΩ@4.5V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
265pF
Number:
1 N-channel
Output Capacitance(Coss):
290pF
Pd - Power Dissipation:
65W
Input Capacitance(Ciss):
2.8nF
Gate Charge(Qg):
50nC@15V
Mfr. Part #:
NTS036N03P5
Package:
PDFN5x6-8
Product Description
Product Overview
The NTS036N03P5 is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and high-speed switching, this MOSFET features low RDS(ON), low gate charge, and high EAS for enhanced reliability. It is ideal for demanding applications such as DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, printed circuit board control, automotive electronics, and uninterruptible power supplies (UPS).
Product Attributes
- Brand: Niuhang (NH Trademark)
- Model: NTS036N03P5
- Channel Type: N-Channel Enhancement Mode
- Package: PDFN5*6
- Certifications: RoHS COMPLIANT
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | ||||||
| Drain-Source Voltage | VGS=0V, ID=250uA | VDS | 30 | V | ||
| Continuous Drain Current | Ta=25 | ID | 120 | A | ||
| RDS(ON) Type | ID=20 A, VGS=10 V | RDS(ON) | 2.80 | 4.00 | m | |
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | Ta=25 | ID | 120 | A | ||
| Continuous Drain Current | Ta=100 | ID | 96 | A | ||
| Drain Current-Pulsed | TJ<175 | IDM | 480 | A | ||
| Maximum Power Dissipation | Ta=25 | PD | 65 | W | ||
| Power Dissipation Derating Factor | Above 25 | DF | 0.43 | W/ | ||
| Power Dissipation Derating Factor | Ta=100 | 33 | W | |||
| Junction Temperature | TJ | -55 | 175 | |||
| Storage Temperature Range | TSTD | -55 | 175 | |||
| Avalanche Current,Single Pulse | L=0.5 mH | IAS | 32 | A | ||
| Single Pulse Avalanche Energy | L=0.5 mH,VDD=15 V | EAS | 256 | mJ | ||
| Electrical Characteristics (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 30 | V | ||
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | 0.029 | V/ | ||
| Drain-Source Leakage Current | VDS=30 V,VGS=0V | IDSS | 1 | uA | ||
| Gate-Body Leakage Current | VGS=20 V,VDS=0V | IGSS | 100 | nA | ||
| Forward Transconductance | ID=20 A,VDS=5 V | gfs | 28 | S | ||
| Gate Threshold Voltage | ID=250uA | V GS(TH) | 1.0 | 1.8 | 2.6 | V |
| Drain-Source On Resistance | ID=20 A,VGS=10 V | RDS(ON) | 2.80 | 4.00 | m | |
| Drain-Source On Resistance | ID=20 A,VGS=4.5 V | RDS(ON) | 3.22 | 4.60 | m | |
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | Rg | 1.70 | |||
| Input Capacitance | VDS=15 V | Ciss | 2800.0 | pF | ||
| Output Capacitance | VGS=0 V | Coss | 290.0 | pF | ||
| Reverse Transfer Capacitance | F=1 MHZ | Crss | 265.0 | pF | ||
| Turn-On Delay Time | VDS=15 V, VGS=10 V, RL=1.2 , RG=10 | td(on) | 15.0 | ns | ||
| Turn-On Rise Time | VDS=15 V, VGS=10 V, RL=1.2 , RG=10 | tr | 36.0 | ns | ||
| Turn-Off Delay Time | VDS=15 V, VGS=10 V, RL=1.2 , RG=10 | td(off) | 44.0 | ns | ||
| Turn-Off Rise Time | VDS=15 V, VGS=10 V, RL=1.2 , RG=10 | tf | 22.0 | ns | ||
| Total Gate Charge | VDS=15 V, ID=20 A, VGS=10 V | Qg | 50.0 | nC | ||
| Gate-Source Charge | VDS=15 V, ID=20 A, VGS=10 V | Qgs | 5.0 | nC | ||
| Gate-Drain Charge | VDS=15 V, ID=20 A, VGS=10 V | Qgd | 10.0 | nC | ||
| Max. Diode Forward Current | IS | 120 | A | |||
| Max. Pulsed Forward Current | ISM | 420 | A | |||
| Diode Forward Voltage | ID=20 A,VGS=0V | VSD | 0.86 | 1.2 | V | |
| Reverse Recovery Time | ID=20 A,di/dt=100 A/us | trr | 55 | ns | ||
| Reverse Recovery Charge | VGS=10 V,VDS=15 V | Qrr | 40.0 | ns | ||
| Thermal Characteristics (Ta=25 Unless Otherwise Specified) | ||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | 60.0 | /W | ||
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | 2.3 | /W | ||
| Dimensions (PDFN5*6) | ||||||
| Dimension | Min. | Typ. | Max. | Inches Min. | Inches Typ. | Inches Max. |
| A | 4.700 | 5.700 | 0.185 | 0.224 | ||
| B | 4.100 | 5.100 | 0.161 | 0.201 | ||
| C | 5.600 | 6.600 | 0.220 | 0.260 | ||
| D | 0.700 | 1.200 | 0.028 | 0.047 | ||
| E | 0.150 | 0.450 | 0.006 | 0.018 | ||
| F | 1.300 | 1.900 | 0.051 | 0.075 | ||
| M | 3.100 | 3.900 | 0.122 | 0.154 | ||
| N | 1.000 | 1.600 | 0.039 | 0.063 | ||
| P | 0.250 | 0.750 | 0.010 | 0.030 | ||
| Packing Information | ||||||
| Package Code | Package Method | Inner Box Size LWH(mm) | Quantity (Pcs/Inner Box) | Outer Carton Size LWH(mm) | Quantity (Pcs/Carton) | |
| PDFN5*6 | Tape Reel | 37036047 | 10000 | 380295375 | 60000 | |
2411201102_NH-NTS036N03P5_C41784118.pdf
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