Schottky Barrier Rectifier NH HBR30100YD Designed for High Frequency Switching and Fast Charging Systems
Key Attributes
Model Number:
HBR30100YD
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
200A
Reverse Leakage Current (Ir):
200A
Diode Configuration:
2 Pair Common Anode
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
100V
Current - Rectified:
30A
Mfr. Part #:
HBR30100YD
Package:
TO-263
Product Description
Niuhang Schottky Barrier Rectifiers HBR3040YD THRU HBR30200YD
The Niuhang HBR3040YD thru HBR30200YD series are Schottky Barrier Rectifiers featuring NH'S Plane Schottky Barrier Chip Technology. They offer a low forward voltage drop for high efficiency and low power loss for high reliability, with high frequency switching speed. These rectifiers are designed for applications such as Switch Mode Power Supplies (SMPS), Fast Chargers, LED Driver and Monitor Lighting, and Automotive Electronics and Charging Posts.
Product Attributes
- Brand: Niuhang Electronic Specification Technology Co., Ltd
- Origin: Not specified
- Material: RoHS-Compliant, Tin Plated Leads
- Color: Not specified
- Certifications: UL-94 ClassV-0 Recognized, RoHS COMPLIANT, HF halogen-free, Pb-Frce
Technical Specifications
| Parameter | Symbol | HBR3040YD | HBR3045YD | HBR3060YD | HBR3080YD | HBR30100YD | HBR30150YD | HBR30200YD | Unit |
| Maximum Ratings | |||||||||
| Maximum Repetitive Peak Reverse Voltage | VRRM | 40 | 45 | 60 | 80 | 100 | 150 | 200 | V |
| Maximum RMS Voltage | VRMS | 28 | 32 | 42 | 56 | 70 | 105 | 140 | V |
| Maximum DC Blocking Voltage | VDC | 40 | 45 | 60 | 80 | 100 | 150 | 200 | V |
| Maximum Average Forward Rectified Current Per Diode | IF(AV) | 15 | 30 | A | |||||
| Peak Forward Surge Current Per Diode (8.3ms Single Half Sine-wave) | IFSM | 200 | A | ||||||
| Current Squared Time Per Diode (t< 8.3ms) | I2t | 166.0 | A2sec | ||||||
| Maximum Mounting Torque (M3 screw) | TMM | 1.1 | N.m | ||||||
| Electrical Characteristics | |||||||||
| Instaneous Forward Voltage Per Diode (IF= 15.0 A) | VF | 0.55 | 0.70 | 0.85 | 0.90 | V | |||
| Maximum DC Reverse Current at Rated DC Blocking Voltage (Ta=25,VR=VRRM) | IRRM | 100 | 80 | 50 | 10 | uA | |||
| Maximum DC Reverse Current at Rated DC Blocking Voltage (Ta=110,VR=VRRM*80%) | IRRM | 10 | 8 | 5 | 3 | mA | |||
| Typical Junction Capacitance Per Diode (4 V,1MHz) | CJ | 750 | 580 | 290 | 240 | pF | |||
| Maximum Reverse Recovery Time (IF=0.5A, IR=1.0A, IRR=0.25A) | Trr | 35 | nS | ||||||
| Thermal Characteristics | |||||||||
| Operating Junction Temperature Range | TJ | -55~125 | -55~150 | -55~175 | |||||
| Storage Temperature Range | TSTD | -55~125 | -55~150 | -55~175 | |||||
| Thermal Resistance Junction To Ambient (Still Air Environment) | RJA | 55.0 | /W | ||||||
| Thermal Resistance Junction-Case (Device Mounted On 1 in2 FR-4 Board With 2oz. Copper) | RJC | 2.0 | /W | ||||||
2508201745_NH-HBR30100YD_C7428011.pdf
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