650V N Channel Enhancement Mode Power MOSFET NH NPS10N65F for power conversion circuits applications
Key Attributes
Model Number:
NPS10N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
840mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
7.5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.609nF@25V
Pd - Power Dissipation:
42W
Gate Charge(Qg):
32nC@10V
Mfr. Part #:
NPS10N65F
Package:
TO-220F
Product Description
Niu Hang NPS10N65F 650V N-Channel Enhancement Mode Power MOSFET
Product Overview
The Niu Hang NPS10N65F is a 650V N-Channel Enhancement Mode Power MOSFET designed for high-efficiency power applications. It features low RDS(ON), ultra-low gate charge, and is 100% UIS and RG tested. This MOSFET is suitable for use in adapters, PCs, PDs, chargers, LED drivers, switched-mode power supplies (SMPS), and uninterruptible power supplies (UPS). Its robust design and advanced features make it a reliable choice for demanding power conversion circuits.
Product Attributes
- Brand: Niu Hang (NH)
- Model: NPS10N65F
- Technology: N-Channel Enhancement Mode Power MOSFET
- Compliance: RoHS Compliant
- Testing: 100% UIS and RG Tested
- Package: TO-220F
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 650 | V | |||
| Gate-Source Voltage | VGS | ±30 | V | |||
| Continuous Drain Current | ID | Ta= 25 | 10.0 | A | ||
| Drain Current-Pulsed | IDM | TJ< 150 | 32 | A | ||
| Maximum Power Dissipation | PD | Ta= 25 | 62.5 | W | ||
| Power Dissipation Derating Factor above 25 | DF | Ta= 25 | 0.5 | W/ | ||
| Maximum Power Dissipation | PD | Tc= 25 | 136 | W | ||
| Power Dissipation Derating Factor above 25 | DF | Tc= 25 | 1.08 | W/ | ||
| Junction Temperature | TJ | -55 | 150 | |||
| Storage temperature range | Tstg | -55 | 150 | |||
| Avalanche Current,Single pulse | IAS | L= 10 mH | 10 | A | ||
| Single Pulse Avalanche Energy | EAS | starting TJ =25, L=10mH | 500 | mJ | ||
| Thermal Characteristics | ||||||
| Thermal Resistance Junction to Ambient | RJA | Note 2 | 62.5 | /W | ||
| Thermal Resistance Junction-Case | RJC | Note 2 | 0.84 | /W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BV DSS | VGS=0V, ID=250uA | 650 | V | ||
| Temperature Coefficient | BV DSS /TJ | ID=250uA,Reference25 | 0.33 | V/ | ||
| Static off Characteristics | ||||||
| Drain-Source Leakage Current | IDSS | VDS= 650 V,VGS=0V | 1 | uA | ||
| Gate-Body Leakage Current | IGSS | VGS= ±30 V,VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VDS= VDS, ID=250uA | 2.0 | 3.0 | V | |
| Static on Characteristics | ||||||
| Drain-Source On Resistance | RDS(ON) | VGS=10V, ID=10A | 0.67 | 0.84 | ||
| Drain-Source On Resistance | RDS(ON) | VGS=10V, ID=10A | 0.84 | 1.0 | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS= 25 V, VGS=0V, f=1MHz | 1609 | pF | ||
| Output Capacitance | Coss | VGS= 0V, VDS=25V, f=1MHz | 136 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, f=1MHz | 10.0 | pF | ||
| Turn-On Delay Time | td(on) | VDS= 325 V, ID=10A, VGS=10V, RG=25 | 3 | ns | ||
| Turn-On Rise Time | tr | VDS= 325 V, ID=10A, VGS=10V, RG=25 | 40 | ns | ||
| Turn-Off Delay Time | td(off) | VDS= 520 V, ID=10A, VGS=10V, RG=25 | 90 | ns | ||
| Turn-Off Rise Time | tf | VDS= 520 V, ID=10A, VGS=10V, RG=25 | 30 | ns | ||
| Total Gate Charge | Qg | VDS= 520 V, ID=10A, VGS=10V | 385 | nC | ||
| Gate-Source Charge | Qgs | VDS= 520 V, ID=10A, VGS=10V | 3.0 | 4.0 | nC | |
| Gate-Drain Charge | Qgd | VDS= 520 V, ID=10A, VGS=10V | 0.67 | nC | ||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Max. Diode Forward Current | IS | 10.0 | A | |||
| Max. Pulsed Forward Current | ISM | 32 | A | |||
| Diode Forward Voltage | VSD | IS=10A, VGS=0V | 1.4 | V | ||
| Reverse Recovery Time | trr | IS=10A, di/dt=100 A/us | 10.5 | ns | ||
| Reverse Recovery Charge | Qrr | IS=10A, di/dt=100 A/us | 0.39 | 0.41 | µC | |
2410121819_NH-NPS10N65F_C7427693.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
