High speed switching NH NPS8N50C MOSFET designed for LED drivers and switching power supply circuits
Key Attributes
Model Number:
NPS8N50C
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
8A
RDS(on):
900mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
96pF
Input Capacitance(Ciss):
1.112nF@25V
Pd - Power Dissipation:
45W
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
NPS8N50C
Package:
TO-220C
Product Description
Product Overview
The NPS8N50C is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high-efficiency and high-speed switching applications, this MOSFET features low RDS(ON), low gate charge, and high EAS for enhanced reliability. It is suitable for use in AC/DC converters, adaptors, chargers, LED drives, high-frequency circuits, and switching power supplies. The device is 100% UIS and RG tested.
Product Attributes
- Brand: Niuhang (NH)
- Model ID: NPS8N50C
- Product Line Code: FF
- Date Code: YWW
- Internal Code: LLWWF
- Package: TO-220C
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | ||||||
| VDS | Tj Min. | VDS | 500 | -- | -- | V |
| Current | Ta Min. | ID | 8 | -- | -- | A |
| RDS(ON) Type | @10V | RDS(ON) | -- | 400.00 | -- | m |
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Voltage | VDS | -- | -- | 500 | V | |
| Gate-Source Voltage | VGS | -- | -- | ±20 | V | |
| Continuous Drain Current (Note 1) | Ta= 25 | ID | -- | -- | 8 | A |
| Continuous Drain Current (Note 1) | Ta= 100 | ID | -- | -- | 5 | A |
| Drain Current-Pulsed (Note 1) | TJ< 150 | IDM | -- | -- | 32 | A |
| Maximum Power Dissipation | Ta= 25 | PD | -- | -- | 114 | W |
| Power Dissipation Derating Factor | Above 25 Ta= 100 | DF | -- | 0.91 | -- | W/ |
| Junction Temperature | TJ | -55 | -- | 150 | ||
| Storage Temperature Range | TSTD | -55 | -- | 150 | ||
| Avalanche Current,Single Pulse (Note 1) | L= 0.5 mH | IAS | -- | -- | 35 | A |
| Single Pulse Avalanche Energy (Note 1) | L= 0.5 mH,VDD= 250 V | EAS | -- | -- | 300 | mJ |
| Thermal Characteristcs (Ta=25 Unless Otherwise Specified) | ||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | -- | 62.5 | -- | /W |
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | -- | 1.1 | -- | /W |
| Electrical Characteristcs (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 500 | -- | -- | V |
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | -- | 0.594 | -- | V/ |
| Drain-Source Leakage Current | VDS= 500 V,VGS=0V | I DSS | -- | -- | 1 | uA |
| Gate-Body Leakage Current | VGS= ±20 V,VDS=0V | I GSS | -- | -- | ±100 | nA |
| Forward Transconductance | ID= 4 A,VDS= 15 V | gfs | -- | 7 | -- | S |
| Gate Threshold Voltage | VDS= VDS ID=250uA | V GS(TH) | 2.0 | 3.0 | 4.0 | V |
| Drain-Source On Resistance | ID= 4 A,VGS= 10 V | R DS(ON) | -- | 400.00 | 900.00 | m |
| Drain-Source On Resistance | ID= 4 A,VGS= 4.5 V | R DS(ON) | -- | 460.00 | 1206.00 | m |
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | -- | 10.00 | -- | |
| Input Capacitance | VDS= 25 V | C iss | -- | 1112.0 | -- | pF |
| Output Capacitance | VGS= 0 V | C oss | -- | 96.0 | -- | pF |
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | -- | 5.0 | -- | pF |
| Switching Paramters (Test Circuit & Waveform See Fig.14) | ||||||
| Turn-On Delay Time | VDS= 250 V | t d(on) | -- | 19.0 | -- | ns |
| Turn-On Rise Time | VGS= 10 V | t r | -- | 15.0 | -- | ns |
| Turn-Off Delay Time | RL= 1.2 | t d(off) | -- | 32.0 | -- | ns |
| Turn-Off Rise Time | RG= 10 | t f | -- | 11.0 | -- | ns |
| Gate Charge Paramters (Test Circuit & Waveform See Fig.15) | ||||||
| Total Gate Charge | VDS= 250 V | Q g | -- | 22.0 | -- | nC |
| Gate-Source Charge | VGS= 10 V | Q gs | -- | 5.0 | -- | nC |
| Gate-Drain Charge | ID= 4 A | Q gd | -- | 10.0 | -- | nC |
| Drain-Source Diode Characteristics And Maximum Ratings (Test Circuit & Waveform See Fig.17) | ||||||
| Max. Diode Forward Cuurent | I S | -- | -- | 8 | A | |
| Max. Pulsed Forward Cuurent | I SM | -- | -- | 28 | A | |
| Diode Forward Voltage | ID= 4 A,VGS=0V | V SD | -- | 1.10 | 1.5 | V |
| Reverse Recovery Time | ID= 4 A,di/dt= 100 A/us | t rr | -- | 895.0 | -- | ns |
| Reverse Recovery Charge | VGS= 10 V,VDS= 250 V | Q rr | -- | 6030.0 | -- | uC |
| OUTLINE DRAWINGS | ||||||
| TO-220C OUTLINE DIMENSIONS | Min. | Typ. | Max. | Unit | ||
| A | 9.50 | -- | 10.50 | mm | ||
| B | 1.10 | -- | 1.65 | mm | ||
| C | 4.15 | -- | 4.95 | mm | ||
| D | 0.25 | -- | 0.65 | mm | ||
| E | 14.50 | -- | 16.70 | mm | ||
| F | 8.40 | -- | 9.95 | mm | ||
| G | 12.15 | -- | 14.30 | mm | ||
| H | 3.00 | -- | 3.80 | mm | ||
| J | 1.05 | -- | 1.60 | mm | ||
| K | 0.65 | -- | 0.95 | mm | ||
| M | 2.10 | -- | 2.90 | mm | ||
| O | 3.20 | -- | 4.10 | mm | ||
| P | 2.45 | -- | 3.10 | mm | ||
| PACKING INFORMATION | ||||||
| Package Code | Package Method | Inner Box Size L×W×H(mm) | Quantity (Pcs/Inner Box) | Outer Carton Size L×W×H(mm) | Quantity (Pcs/Carton) | |
| TO-220C | Tube Packaging | 560×155×55 | 1000 | 570×284×185 | 5000 | |
2411070958_NH-NPS8N50C_C41784107.pdf
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