High Reliability NH NTS330P06C P Channel MOSFET for Synchronous Rectification and High Frequency Circuits
Key Attributes
Model Number:
NTS330P06C
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
34A
Operating Temperature -:
-55℃~+175℃
RDS(on):
28mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
207pF
Number:
1 P-Channel
Output Capacitance(Coss):
225pF
Pd - Power Dissipation:
88W
Input Capacitance(Ciss):
4.723nF
Gate Charge(Qg):
76nC@10V
Mfr. Part #:
NTS330P06C
Package:
TO-220C
Product Description
Product Overview
The NTS330P06C is a P-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. It features low RDS(ON) for high efficiency, low gate charge for high-speed switching, and high EAS for reliability. This MOSFET is 100% UIS and RG tested and is suitable for applications such as DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, printed circuit board control, automotive electronics, and UPS (Uninterruptible Power Supplies).
Product Attributes
- Brand: Niuhang (NH)
- Product Line Code: FF
- Date Code: YWW
- Internal Code: LLWWF
- Package: TO-220C
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | -- | -- | V | Tj |
| Continuous Drain Current | ID | -- | -- | -34 | A | Ta= 25 (Note 1) |
| Continuous Drain Current | ID | -- | -- | -27.2 | A | Ta= 100 (Note 1) |
| Drain Current-Pulsed | IDM | -- | -- | -136 | A | TJ< 175 (Note 1) |
| Maximum Power Dissipation | PD | -- | -- | 88 | W | Ta= 25 |
| Power Dissipation Derating Factor | DF | -- | 0.59 | -- | W/ | Above 25 (Ta= 100 ) |
| Junction Temperature | TJ | -55 | -- | 175 | -- | |
| Storage Temperature Range | TSTD | -55 | -- | 175 | -- | |
| Avalanche Current,Single Pulse | IAS | -- | -- | -44 | A | L= 0.5 mH (Note 1) |
| Single Pulse Avalanche Energy | EAS | -- | 484 | -- | mJ | L= 0.5 mH,VDD= -30 V, IAS= -44 A,RG= 10 , Starting Tj=25 ,VG = -10 V (Note 1) |
| Thermal Resistance Junction To Ambient | RJA | -- | 62.0 | -- | /W | Still Air Environment With Ta =25C |
| Thermal Resistance Junction-Case | RJC | -- | 1.7 | -- | /W | Device Mounted On 1 in 2 FR-4 Board With 2oz |
| Drain-Source Breakdown Voltage | BV DSS | -60 | -- | -- | V | VGS=0V,ID=-250uA |
| Bvdss Temperature Coefficient | BV DSS/T J | -- | 0.057 | -- | V/ | ID=-250uA,Reference 25 |
| Drain-Source Leakage Current | I DSS | -- | -- | -1 | uA | VDS= -60 V,VGS=0V |
| Gate-Body Leakage Current | I GSS | -- | -- | 100 | nA | VGS= 20 V,VDS=0V |
| Forward Transconductance | gfs | -- | 33 | -- | S | ID= -17 A,VDS= -5 V |
| Gate Threshold Voltage | V GS(TH) | -2.0 | -3.0 | -4.0 | V | ID=-250uA |
| Drain-Source On Resistance | R DS(ON) | -- | 26.00 | 28.00 | m | ID= -17 A,VGS= -10 V |
| Drain-Source On Resistance | R DS(ON) | -- | 29.90 | 37.52 | m | ID= -17 A,VGS= -4.5 V |
| Gate Resistance | R g | -- | 0.70 | -- | VGS=0V,VDS=0V, Freq.=1MHz | |
| Input Capacitance | C iss | -- | 4723.0 | -- | pF | VDS= -30 V, F= 1 MHZ |
| Output Capacitance | C oss | -- | 225.0 | -- | pF | VGS= 0 V, F= 1 MHZ |
| Reverse Transfer Capacitance | C rss | -- | 207.0 | -- | pF | F= 1 MHZ |
| Turn-On Delay Time | t d(on) | -- | 15.0 | -- | ns | VDS= -30 V, VGS= -10 V, RG= 10 |
| Turn-On Rise Time | t r | -- | 33.0 | -- | ns | VDS= -30 V, VGS= -10 V, RG= 10 |
| Turn-Off Delay Time | t d(off) | -- | 59.0 | -- | ns | VDS= -30 V, VGS= -10 V, RG= 10 , RL= 1.2 |
| Turn-Off Rise Time | t f | -- | 12.0 | -- | ns | VDS= -30 V, VGS= -10 V, RG= 10 |
| Total Gate Charge | Q g | -- | 76.0 | -- | nC | VDS= -30 V, ID= -17 A, VGS= -10 V |
| Gate-Source Charge | Q gs | -- | 16.0 | -- | nC | VDS= -30 V, ID= -17 A, VGS= -10 V |
| Gate-Drain Charge | Q gd | -- | 20.0 | -- | nC | VDS= -30 V, ID= -17 A, VGS= -10 V |
| Max. Diode Forward Current | I S | -- | -- | -34 | A | -- |
| Max. Pulsed Forward Current | I SM | -- | -- | -119 | A | -- |
| Diode Forward Voltage | V SD | -- | -0.85 | -1.2 | V | ID= -17 A,VGS=0V |
| Reverse Recovery Time | t rr | -- | 29 | -- | ns | ID= -17 A,di/dt= 100 A/us |
| Reverse Recovery Charge | Q rr | -- | 35.0 | -- | uC | ID= -17 A,di/dt= 100 A/us, VGS= -10 V,VDS= -30 V |
| Weight | -- | -- | 2.057 | -- | Grams (0.07255 Ounce) | -- |
| Model ID | NTS330P06C | -- | -- | -- | -- | -- |
| P-Channel Enhancement Mode Power MOSFET | -- | -- | -- | -- | -- | -- |
| Dim | Millimeters | Inches | ||||
|---|---|---|---|---|---|---|
| Min. | Typ. | Max. | Min. | Typ. | Max. | |
| A | 9.50 | -- | 10.50 | 0.37 | -- | 0.41 |
| B | 1.10 | -- | 1.65 | 0.04 | -- | 0.06 |
| C | 4.15 | -- | 4.95 | 0.16 | -- | 0.19 |
| D | 0.25 | -- | 0.65 | 0.01 | -- | 0.03 |
| E | 14.50 | -- | 16.70 | 0.57 | -- | 0.66 |
| F | 8.40 | -- | 9.95 | 0.33 | -- | 0.39 |
| G | 12.15 | -- | 14.30 | 0.48 | -- | 0.56 |
| H | 3.00 | -- | 3.80 | 0.12 | -- | 0.15 |
| J | 1.05 | -- | 1.60 | 0.04 | -- | 0.06 |
| K | 0.65 | -- | 0.95 | 0.03 | -- | 0.04 |
| M | 2.10 | -- | 2.90 | 0.08 | -- | 0.11 |
| O | 3.20 | -- | 4.10 | 0.13 | -- | 0.16 |
| P | 2.45 | -- | 3.10 | 0.10 | -- | 0.12 |
| Package Code | Package Method | Inner Box Size LWH(mm) | Quantity (Pcs/Inner Box) | Outer Carton Size LWH(mm) | Quantity (Pcs/Carton) |
|---|---|---|---|---|---|
| TO-220C | Tube Packaging | 560x155x55 | 1000 | 570284185 | 5000 |
2411011351_NH-NTS330P06C_C41784120.pdf
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