Power switching transistor NIKO-SEM P2610BD N channel enhancement mode field effect transistor
Key Attributes
Model Number:
P2610BD
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
36A
Operating Temperature -:
-55℃~+150℃
RDS(on):
26.8mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
2.3V
Reverse Transfer Capacitance (Crss@Vds):
88pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.918nF@25V
Pd - Power Dissipation:
-
Gate Charge(Qg):
41.5nC@10V
Mfr. Part #:
P2610BD
Package:
TO-252-2
Product Description
Product Overview
The P2610BD is an N-Channel Enhancement Mode Field Effect Transistor designed for high-performance applications. It offers a robust combination of voltage, current, and low on-resistance capabilities, making it suitable for power switching and control circuits. This transistor is Halogen-Free & Lead-Free, adhering to environmental standards.
Product Attributes
- Brand: NIKO-SEM
- Model: P2610BD
- Package: TO-252
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameters | Symbol | Conditions | Limits | Units |
| ABSOLUTE MAXIMUM RATINGS | VDS | 100 | V | |
| VGS | ±20 | V | ||
| ID | TC = 25 °C | 36 | A | |
| ID | TC = 100 °C | 23 | A | |
| IDM | 80 | A | ||
| IAS | 13.9 | A | ||
| EAS | L = 0.1mH | 9.7 | mJ | |
| PD | TC = 25 °C | 78 | W | |
| PD | TC = 100 °C | 31 | W | |
| TJ, Tstg | -55 to 150 | °C | ||
| ELECTRICAL CHARACTERISTICS | V(BR)DSS | VGS = 0V, ID = 250µA | 100 | V |
| VGS(th) | VDS = VGS, ID = 250µA | 1.3 - 1.8 - 2.3 | V | |
| IGSS | VDS = 0V, VGS = ±20V | ±100 | nA | |
| IDSS | VDS = 80V, VGS = 0V | 1 | µA | |
| IDSS | VDS = 80V, VGS = 0V, TJ = 125 °C | 10 | µA | |
| RDS(ON) | VGS = 4.5V, ID = 10A | 24 - 35 | mΩ | |
| RDS(ON) | VGS = 10V , ID = 10A | 22 - 26.8 | mΩ | |
| DYNAMIC CHARACTERISTICS | gfs | VDS = 5V, ID = 10A | 55 | S |
| Ciss | VGS = 0V, VDS = 25V, f = 1MHz | 1918 | pF | |
| Coss | 139 | pF | ||
| Crss | 88 | pF | ||
| Rg | VGS = 0V, VDS = 0V, f = 1MHz | 0.8 | Ω | |
| Qg | VGS = 10 V, VDS = 50V , ID = 10A | 41.5 | nC | |
| Qgs | 5.7 | |||
| Qgd | 11.6 | |||
| td(on) | VDS = 50V ID ≈ 10A, VGS = 10V, RGEN =6Ω | 14 | nS | |
| tr | 42 | nS | ||
| td(off) | 43 | nS | ||
| tf | 34 | nS | ||
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | IS | 36 | A | |
| VSD | IF = 10A, VGS = 0V | 1.2 | V | |
| trr | IF = 10A, dlF/dt = 100A / μS | 29.3 | nS | |
| Qrr | 29 | nC |
2409292333_NIKO-SEM-P2610BD_C440044.pdf
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