NIKO-SEM P1010AT N-Channel Enhancement Mode Field Effect Transistor TO-220 Package with Current Handling
Key Attributes
Model Number:
P1010AT
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
69A
Operating Temperature -:
-55℃~+175℃
RDS(on):
10.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
4.5V
Reverse Transfer Capacitance (Crss@Vds):
297pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
4.863nF@25V
Pd - Power Dissipation:
115W
Gate Charge(Qg):
76nC@7V
Mfr. Part #:
P1010AT
Package:
TO-220
Product Description
N-Channel Enhancement Mode Field Effect Transistor - P1010AT
The P1010AT is a N-Channel Enhancement Mode Field Effect Transistor designed for various applications. This Halogen-Free & Lead-Free component, housed in a TO-220 package, offers robust performance with high current handling capabilities and low on-resistance.
Product Attributes
- Brand: NIKO-SEM
- Model: P1010AT
- Package: TO-220
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±25 | V | |||
| Continuous Drain Current | ID | TC = 25 ° C | 69 | A | ||
| Continuous Drain Current | ID | TC = 100 ° C | 49 | A | ||
| Pulsed Drain Current | IDM | 200 | A | |||
| Avalanche Current | IAS | 23 | A | |||
| Avalanche Energy | EAS | L = 1mH | 264 | mJ | ||
| Power Dissipation | PD | TC = 25 ° C | 115 | W | ||
| Power Dissipation | PD | TC = 100 ° C | 58 | W | ||
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 | 175 | ° C | ||
| THERMAL RESISTANCE RATINGS | ||||||
| Junction-to-Case | RθJC | 1.3 | ° C / W | |||
| Junction-to-Ambient | RθJA | 50 | ° C / W | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 100 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 2.5 | 3.5 | 4.5 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±25V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 80V, VGS = 0V | 1 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 80V, VGS = 0V, TJ = 125 ° C | 10 | µA | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = 10V, ID = 20A | 8.2 | 10.5 | mΩ | |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 7V, ID = 20A | 9.9 | 13.5 | mΩ | |
| Forward Transconductance | gfs | VDS = 5V, ID = 20A | 57 | S | ||
| DYNAMIC CHARACTERISTICS | ||||||
| Input Capacitance | Ciss | VGS = 0V, VDS = 25V, f = 1MHz | 4863 | pF | ||
| Output Capacitance | Coss | 375 | pF | |||
| Reverse Transfer Capacitance | Crss | 297 | pF | |||
| Gate Resistance | Rg | VGS = 0V, VDS = 0V, f = 1MHz | 0.8 | Ω | ||
| Total Gate Charge | Qg | VDS =50V,ID = 20A, VGS = 10V | 101 | nC | ||
| Gate-Source Charge | Qgs | 76 | nC | |||
| Gate-Drain Charge | Qgd | 28 | nC | |||
| Turn-On Delay Time | td(on) | VDD = 50V, ID & 20A, VGS = 10V, RGEN =6Ω | 41 | nS | ||
| Rise Time | tr | 99 | nS | |||
| Turn-Off Delay Time | td(off) | 93 | nS | |||
| Fall Time | tf | 64 | nS | |||
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Continuous Current | IS | 63 | A | |||
| Forward Voltage | VSD | IF = 20A , VGS = 0V | 1.2 | V | ||
| Reverse Recovery Time | trr | IF = 20A , dIF/dt= 100A/µs | 46 | nS | ||
| Reverse Recovery Charge | Qrr | 69 | nC | |||
2411220042_NIKO-SEM-P1010AT_C440040.pdf
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