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quality Dual transistor PANASONIC CPH6532-TL-E ideal for relay lamp motor and flash memory driver applications factory
quality Dual transistor PANASONIC CPH6532-TL-E ideal for relay lamp motor and flash memory driver applications factory
quality Dual transistor PANASONIC CPH6532-TL-E ideal for relay lamp motor and flash memory driver applications factory
quality Dual transistor PANASONIC CPH6532-TL-E ideal for relay lamp motor and flash memory driver applications factory

Dual transistor PANASONIC CPH6532-TL-E ideal for relay lamp motor and flash memory driver applications

Key Attributes
Model Number: CPH6532-TL-E
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
1.1W
Transition Frequency(fT):
420MHz
Type:
NPN
Current - Collector(Ic):
1A
Number:
2 NPN
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
CPH6532-TL-E
Package:
CPH-6
Product Description

Product Overview

The CPH6532 is a high-density NPN dual bipolar transistor designed for applications such as relay drivers, lamp drivers, motor drivers, and flash memory. It features two NPN transistors within a single CPH6 package, offering a low VCE(sat) of 50V and 1A. This composite type facilitates high-density mounting and is equivalent to the CPH3216, enabling smaller and slimmer applied sets. Its ultrasmall package is ideal for compact electronic designs.

Product Attributes

  • Brand: onsemi (Semiconductor Components Industries, LLC)
  • Package Type: CPH6
  • JEITA/JEDEC Standards: SC-74, SOT-26, SOT-457
  • Material: Pb Free (as indicated by ordering information)
  • Certifications: Not explicitly stated, but Pb Free designation implies compliance with certain environmental standards.

Technical Specifications

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 80 V
Collector-to-Emitter Voltage VCES 80 V
Collector-to-Emitter Voltage VCEO 50 V
Emitter-to-Base Voltage VEBO 5 V
Collector Current IC 1.0 A
Collector Current (Pulse) ICP 2 A
Base Current IB 200 mA
Collector Dissipation (1 unit, mounted on ceramic substrate 600mm0.8mm) PC 0.9 W
Total Power Dissipation (mounted on ceramic substrate 600mm0.8mm) PT 1.1 W
Junction Temperature Tj 150 C
Storage Temperature Tstg -55 to +150 C
Collector Cutoff Current ICBO VCB=40V, IE=0A 0.1 A
Emitter Cutoff Current IEBO VEB=4V, IC=0A 0.1 A
DC Current Gain hFE VCE=2V, IC=100mA 200 to 560
Gain-Bandwidth Product fT VCE=10V, IC=300mA 420 MHz
Output Capacitance Cob VCB=10V, f=1MHz 6 pF
Collector-to-Emitter Saturation Voltage VCE(sat)1 IC=500mA, IB=10mA 130 to 190 mV
Collector-to-Emitter Saturation Voltage VCE(sat)2 IC=300mA, IB=6mA 90 to 135 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=10mA 0.81 to 1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=10A, IE=0A 80 V
Collector-to-Emitter Breakdown Voltage V(BR)CES IC=100A, RBE=0 80 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE= 50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10A, IC=0A 5 V
Turn-On Time ton See specified Test Circuit 38 ns
Storage Time tstg See specified Test Circuit 332 ns
Fall Time tf See specified Test Circuit 40
Minimum Packing Quantity 3,000 pcs./reel
Mass (typical) 0.015 g

Ordering Information

Device Package Shipping Memo
CPH6532-TL-E CPH6 3,000pcs./reel

2411192333_PANASONIC-CPH6532-TL-E_C19101216.pdf

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