86--136 6733 2386
quality Voltage Regulation and Relay Driving Transistor PANASONIC 2SD1835S-AA with Fast Switching Capability factory
quality Voltage Regulation and Relay Driving Transistor PANASONIC 2SD1835S-AA with Fast Switching Capability factory

Voltage Regulation and Relay Driving Transistor PANASONIC 2SD1835S-AA with Fast Switching Capability

Key Attributes
Model Number: 2SD1835S-AA
Product Custom Attributes
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
750mW
Transition Frequency(fT):
150MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
2SD1835S-AA
Product Description

Product Overview

The 2SD1835 is an NPN single bipolar transistor designed for applications requiring voltage regulation, relay driving, lamp driving, and general electrical equipment. It features a large current capacity, low collector-to-emitter saturation voltage (VCE(sat)), and fast switching times, benefiting from the adoption of FBET and MBIT processes. This device offers a maximum collector-to-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 2A.

Product Attributes

  • Brand: onsemi
  • Origin: Semiconductor Components Industries, LLC
  • Manufacturing Process: FBET, MBIT

Technical Specifications

Parameter Symbol Conditions Ratings Unit
Absolute Maximum Ratings
Collector-to-Base Voltage VCBO 60 V
Collector-to-Emitter Voltage VCEO 50 V
Emitter-to-Base Voltage VEBO 6 V
Collector Current IC 2 A
Collector Current (Pulse) ICP 3 A
Collector Dissipation PC 0.75 W
Junction Temperature Tj 150 C
Storage Temperature Tstg -55 to +150 C
Electrical Characteristics (Ta=25C)
Collector Cutoff Current ICBO VCB=50V, IE=0A 100 nA
Emitter Cutoff Current IEBO VEB=4V, IC=0A 100 nA
DC Current Gain hFE1 VCE=2V, IC=100mA 100* - 560*
hFE2 VCE=2V, IC=1.5A 40*
Gain-Bandwidth Product fT VCE=10V, IC=50mA 150 MHz
Output Capacitance Cob VCB=10V, f=1MHz 12 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=1A, IB=50mA 0.15 - 0.4 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=1A, IB=50mA 0.9 - 1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=10A, IE=0A 60 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE= 50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10A, IC=0A 6 V
Turn-ON Time ton See specified Test Circuit 60 ns
Storage Time tstg 550 ns
Fall Time tf 30 ns
Package Information
Package Type NP
JEITA/JEDEC SC-34A, TO-92, TO-226AA, SOT-54
Minimum Packing Quantity 1,500 pcs./box, 500pcs./bag
Mass (typical) 0.269 g
Ordering Information
Device Package Shipping Memo
2SD1835S NP 500pcs./bag Pb Free
2SD1835T NP 500pcs./bag Pb Free
2SD1835S-AA NP 1,500pcs./box
2SD1835T-AA NP 1,500pcs./box

2411200001_PANASONIC-2SD1835S-AA_C17532517.pdf

Related Products
quality Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications factory
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
quality Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability factory
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
quality YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies factory
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
quality YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages factory
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.