Dual PNP Bias Resistor Transistor onsemi MUN5133DW1T1G Featuring Integrated Base Resistors for Circuits
Key Attributes
Model Number:
MUN5133DW1T1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
4.7kΩ
Resistor Ratio:
0.1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MUN5133DW1T1G
Package:
SOT-363
Product Description
Product Overview
This series of Dual PNP Bias Resistor Transistors (BRT) integrates a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor. This integration eliminates the need for external components, simplifying circuit design, reducing board space, and lowering component count. These devices are suitable for applications requiring unique site and control change requirements, with S and NSV prefixes qualifying for AEC-Q101 standards and PPAP capability. They are also Pb-free, Halogen/BFR-free, and RoHS compliant.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Material: Pb-Free, Halogen Free/BFR Free
- Certifications: AEC-Q101 Qualified (S and NSV Prefix), PPAP Capable (S and NSV Prefix), RoHS Compliant
Technical Specifications
| Device | Package | Collector-Base Voltage (VCBO) | Collector-Emitter Voltage (VCEO) | Collector Current (IC) | Input Forward Voltage (VIN(fwd)) | Input Reverse Voltage (VIN(rev)) | R1 | R2 | TJ, Tstg |
| MUN5133DW1 | SOT-363 | 50 Vdc | 50 Vdc | 100 mAdc | 30 Vdc | 5 Vdc | 4.7 k | 47 k | -55 to +150 C |
| NSBA143ZDXV6 | SOT-563 | 50 Vdc | 50 Vdc | 100 mAdc | 30 Vdc | 5 Vdc | 4.7 k | 47 k | -55 to +150 C |
| NSBA143ZDP6 | SOT-963 | 50 Vdc | 50 Vdc | 100 mAdc | 30 Vdc | 5 Vdc | 4.7 k | 47 k | -55 to +150 C |
| Characteristic | Symbol | Unit | MUN5133DW1 (SOT-363) | NSBA143ZDXV6 (SOT-563) | NSBA143ZDP6 (SOT-963) |
| Collector-Base Cutoff Current | ICBO | nAdc | 100 | 100 | 100 |
| Collector-Emitter Cutoff Current | ICEO | nAdc | 500 | 500 | 500 |
| Emitter-Base Cutoff Current | IEBO | mAdc | 0.18 | 0.18 | 0.18 |
| Collector-Base Breakdown Voltage | V(BR)CBO | Vdc | 50 | 50 | 50 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | Vdc | 50 | 50 | 50 |
| DC Current Gain | hFE | 80 - 140 | 80 - 140 | 80 - 140 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | Vdc | 0.25 | 0.25 | 0.25 |
| Input Voltage (off) | Vi(off) | Vdc | 0.67 | 0.67 | 0.67 |
| Input Voltage (on) | Vi(on) | Vdc | 0.91 | 0.91 | 0.91 |
| Output Voltage (on) | VOL | Vdc | 0.2 | 0.2 | 0.2 |
| Output Voltage (off) | VOH | Vdc | 4.9 | 4.9 | 4.9 |
| Input Resistor R1 | R1 | k | 3.3 - 6.1 (Typ 4.7) | 3.3 - 6.1 (Typ 4.7) | 3.3 - 6.1 (Typ 4.7) |
| Resistor Ratio R1/R2 | R1/R2 | 0.08 - 0.14 (Typ 0.1) | 0.08 - 0.14 (Typ 0.1) | 0.08 - 0.14 (Typ 0.1) |
2410121854_onsemi-MUN5133DW1T1G_C891816.pdf
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