Compact digital transistor device onsemi MMUN2132LT1G featuring monolithic bias network for circuit design
Key Attributes
Model Number:
MMUN2132LT1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
4.7kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MMUN2132LT1G
Package:
SOT-23
Product Description
Digital Transistors (BRT)
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. The BRT eliminates these individual components by integrating them into a single device, reducing system cost and board space. They are ideal for simplifying circuit design, reducing board space, and decreasing component count.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Certifications: AEC-Q101 Qualified and PPAP Capable (for S and NSV Prefix), RoHS Compliant
- Material: PbFree, Halogen Free/BFR Free
Technical Specifications
| Device | Part Marking | Package | Collector-Base Voltage (VCBO) | Collector-Emitter Voltage (VCEO) | Collector Current (IC) | Input Forward Voltage (VIN(fwd)) | Input Reverse Voltage (VIN(rev)) | R1 | R2 |
| MUN2132T1G, NSVMUN2132T1G* | 6J | SC59 | 50 Vdc | 50 Vdc | 100 mAdc | 30 Vdc | 10 Vdc | 4.7 k | 4.7 k |
| MMUN2132LT1G, NSVMMUN2132LT1G* | A6J | SOT23 | 50 Vdc | 50 Vdc | 100 mAdc | 30 Vdc | 10 Vdc | 4.7 k | 4.7 k |
| MUN5132T1G, NSVMUN5132T1G* | 6J | SC70/SOT323 | 50 Vdc | 50 Vdc | 100 mAdc | 30 Vdc | 10 Vdc | 4.7 k | 4.7 k |
| DTA143EET1G | 43 | SC75 | 50 Vdc | 50 Vdc | 100 mAdc | 30 Vdc | 10 Vdc | 4.7 k | 4.7 k |
| DTA143EM3T5G, NSVDTA143EM3T5G* | 6J | SOT723 | 50 Vdc | 50 Vdc | 100 mAdc | 30 Vdc | 10 Vdc | 4.7 k | 4.7 k |
| NSBA143EF3T5G | A (90)* | SOT1123 | 50 Vdc | 50 Vdc | 100 mAdc | 30 Vdc | 10 Vdc | 4.7 k | 4.7 k |
2410010304_onsemi-MMUN2132LT1G_C152489.pdf
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