High current handling N channel power MOSFET NSS085N100P5 with 100V drain source voltage and low RDS
Key Attributes
Model Number:
NSS085N100P5
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
1.3V
Reverse Transfer Capacitance (Crss@Vds):
80pF@35V
Number:
1 N-channel
Pd - Power Dissipation:
-
Input Capacitance(Ciss):
2nF@35V
Gate Charge(Qg):
43nC@10V
Mfr. Part #:
NSS085N100P5
Package:
PDFN5x6-8
Product Description
Product Overview
The NSS085N100P5 is a high-performance N-channel 100V Enhancement Mode Power MOSFET from Niu Hang. It features advanced trench MOSFET technology, offering low RDS(ON) and ultra-low gate charge for efficient power handling. This RoHS Compliant component is 100% UIS and RG Tested, providing high power and current handling capabilities. It is suitable for a range of applications including PD Charger V-BUS, SMPS 2nd Synchronous Rectifier, MB/VGA Vcore, BLDC Motor drivers, and POL applications.
Product Attributes
- Brand: Niu Hang (NH)
- Technology: Advanced trench MOSFET
- Compliance: RoHS Compliant
- Testing: 100% UIS and RG Tested
- Mode: Enhancement Mode
- Channel Type: N-channel
Technical Specifications
| Product Summary | |||
|---|---|---|---|
| Symbol | NSS085N100P5 | Unit | Description |
| BVDSS,Min. | 100 | V | Drain-Source Breakdown Voltage |
| ID | 100 | A | Continuous Drain Current (Note 1) |
| IDM | 300 | A | Drain Current-Pulsed (Note 1) |
| PD | 150 | W | Maximum Power Dissipation |
| RDS(ON),Max. at Vgs=10V | 7.5 | m | Drain-Source On Resistance |
| Qg,Typ. | 43 | nC | Total Gate Charge |
| Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified) | |||||
|---|---|---|---|---|---|
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | 100 | - | - | V |
| Drain-Source Leakage Current | IDSS | - | - | 1 | uA |
| Gate-Body Leakage Current | IGSS | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(TH) | 1.3 | 1.7 | 2.4 | V |
| Drain-Source On Resistance | RDS(ON) | - | 9.5 | 11.0 | m |
| Forward Transconductance | gFS | - | 12 | - | S |
| Input Capacitance | Ciss | - | 2000 | - | pF |
| Output Capacitance | Coss | - | 820 | - | pF |
| Reverse Transfer Capacitance | Crss | - | 80 | - | pF |
| Turn-On Delay Time | td(on) | - | 9 | - | ns |
| Turn-On Rise Time | tr | - | 7 | - | ns |
| Turn-Off Delay Time | td(off) | - | 50 | - | ns |
| Turn-Off Rise Time | tf | - | 11 | - | ns |
| Gate Resistance | Rg | - | 1.0 | - | |
| Total Gate Charge | Qg | - | 43 | - | nC |
| Gate-Source Charge | Qgs | - | 6.5 | - | nC |
| Gate-Drain Charge | Qgd | - | 8.0 | - | nC |
| Max. Diode Forward Current | IF | - | - | 100 | A |
| Max. Pulsed Forward Current | IFM | - | - | 300 | A |
| Diode Forward Voltage | VSD | - | 0.8 | 1.2 | V |
| Reverse Recovery Time | trr | - | 27 | - | ns |
| Reverse Recovery Charge | Qrr | - | 113 | - | C |
| Absolute Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified) | |||
|---|---|---|---|
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage | VDS | 100 | V |
| Gate-Source Voltage | VGS | 20 | V |
| Continuous Drain Current | ID | 100 | A |
| Drain Current-Pulsed | IDM | 300 | A |
| Maximum Power Dissipation | PD | 150 | W |
| Power Dissipation Derating Factor above 25 | DF | 1.20 | W/ |
| Junction Temperature | TJ | 150 | |
| Storage temperature range | TSTD | -55 to 150 | |
| Avalanche Current,Single pulse | IAS | 38 | A |
| Single Pulse Avalanche Energy | EAS | 361 | mJ |
| Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified) | ||||
|---|---|---|---|---|
| Parameter | Symbol | Test Conditions | Value | Unit |
| Thermal Resistance Junction to Ambient | RJA | Ta=25 | 43 | /W |
| Thermal Resistance Junction to Ambient | RJA | Ta=100 | 100 | /W |
| Thermal Resistance Junction-Case | RJC | Note 2 | 0.84 | /W |
| Outline Drawings Dimensions (PDFN5*6) | |||
|---|---|---|---|
| Dim. | Millimeters | Inches | |
| A | 4.800 - 5.000 | 0.189 - 0.197 | |
| B | 5.650 - 5.850 | 0.222 - 0.230 | |
| C | 5.900 - 6.100 | 0.232 - 0.240 | |
| D | 0.900 - 1.100 | 0.035 - 0.043 | |
| E | - 1.270 | - 0.050 | |
| F | 0.250 - 0.350 | 0.010 - 0.014 | |
| G | - 0.150 | - 0.006 | |
| H | 0.100 - 0.160 | 0.004 - 0.006 | |
| J | - 0.254 | - 0.010 | |
| K | R0.1 | R0.0039 | |
| L | - 4.000 | - 0.157 | |
| M | - 3.450 | - 0.136 | |
| N | - 1.350 | - 0.053 | |
| P | - 0.550 | - 0.022 | |
| R | - 0.1 | - 0.004 | |
| Packing Information | ||||||
|---|---|---|---|---|---|---|
| Package Method | Reel Size (mm) | Quantity (pcs/reel) | Inner Box Size LWH(mm) | Quantity (pcs/Inner Box) | Outer Carton Size LWH(mm) | Quantity (pcs/carton) |
| Tape Reel | 340 | 5000 | 34034050 | 10000 | 360360260 | - |
2410121853_NH-NSS085N100P5_C7427704.pdf
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