Surface mount Schottky diode onsemi MBRA140T3G offering low forward voltage drop and compact design
Key Attributes
Model Number:
MBRA140T3G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Leakage Current (Ir):
500uA@40V
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
550mV@1A
Current - Rectified:
1A
Mfr. Part #:
MBRA140T3G
Package:
SMA(DO-214AC)
Product Description
Product Overview
The MBRA140T3/D is a surface mount Schottky power rectifier employing a large area metal-to-silicon Schottky Barrier principle. Its state-of-the-art epitaxial construction with oxide passivation and metal overlay contact makes it ideal for low voltage, high frequency rectification, or as free wheeling and polarity diodes in space-constrained surface mount applications. Key advantages include a very low forward voltage drop and a compact, easily handled package.
Product Attributes
- Brand: ON Semiconductor
- Certifications: AECQ101 Qualified (NRVBA & SBRA Prefix), PPAP Capable (NRVBA & SBRA Prefix), PbFree, Halogen Free/BFR Free, RoHS Compliant
- Material: Epoxy, Molded
- Package: SMA (Surface Mount)
Technical Specifications
| Characteristic | Symbol | Value | Unit |
| Peak Repetitive Reverse Voltage | VRRM, VRWM, VR | 40 | V |
| Average Rectified Forward Current (TC = 95C) | IO | 1.0 | A |
| Peak Repetitive Forward Current (TC = 100C, 20 kHz) | IFRM | 2.0 | A |
| Non-Repetitive Peak Surge Current (60 Hz, Halfwave) | IFSM | 30 | A |
| Storage Temperature | Tstg | 55 to +150 | C |
| Operating Junction Temperature | TJ | 55 to +125 | C |
| Voltage Rate of Change | dv/dt | 10,000 | V/s |
| Thermal Resistance, Junction-to-Lead (Note 1) | RJL | 35 | C/W |
| Thermal Resistance, Junction-to-Ambient (Note 1) | RJA | 86 | C/W |
| Maximum Instantaneous Forward Voltage (IF = 1.0 A, TJ = 25C) | VF | 0.55 | V |
| Maximum Instantaneous Forward Voltage (IF = 2.0 A, TJ = 25C) | VF | 0.71 | V |
| Maximum Instantaneous Reverse Current (VR = 40 V, TJ = 25C) | IR | 0.5 | mA |
| Maximum Instantaneous Reverse Current (VR = 20 V, TJ = 100C) | IR | 4.0 | mA |
2410121947_onsemi-MBRA140T3G_C54798.pdf
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