Switching N Channel MOSFET NH NTH065N06C with Low Gate Charge and High Continuous Drain Current
Key Attributes
Model Number:
NTH065N06C
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
100A
RDS(on):
6.5mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
193pF
Number:
1 N-channel
Output Capacitance(Coss):
300pF
Input Capacitance(Ciss):
5.3nF@30V
Pd - Power Dissipation:
115W
Gate Charge(Qg):
91nC@10V
Mfr. Part #:
NTH065N06C
Package:
TO-220C
Product Description
Product Overview
The NTH065N06C is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. It features low RDS(ON) for high efficiency and low gate charge for high-speed switching. With high EAS for reliability, this MOSFET is 100% UIS and RG tested. Typical applications include DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, printed circuit board control, automotive electronics, and UPS (Uninterruptible Power Supplies).
Product Attributes
- Brand: Niuhang (NH)
- Model ID: NTH065N06C
- Product Line Code: FF
- Date Code: YWW
- Internal Code: LLWWF
- Package: TO-220C
- Certifications: RoHS Compliant, Pb-Free
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | |||||||
| Drain-Source Voltage | VDS | 60 | V | ||||
| Continuous Drain Current | @Ta=25 | ID | 91 | A | |||
| RDS(ON) Type | @10V, ID=20A | RDS(ON) | 5.40 | 6.50 | m | ||
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | |||||||
| Drain-Source Voltage | VDS | 60 | V | ||||
| Gate-Source Voltage | VGS | 20 | V | ||||
| Continuous Drain Current (Note 1) | Ta= 25 | ID | 91 | A | |||
| Continuous Drain Current (Note 1) | Ta= 100 | ID | 73 | A | |||
| Drain Current-Pulsed (Note 1) | TJ< 175 | IDM | 364 | A | |||
| Maximum Power Dissipation | Ta= 25 | PD | 115 | W | |||
| Power Dissipation Derating Factor | Above 25 | DF | 0.77 | W/ | |||
| Power Dissipation Derating Factor | Ta= 100 | 58 | W | ||||
| Junction Temperature | TJ | -55 | 175 | ||||
| Storage Temperature Range | TSTD | -55 | 175 | ||||
| Avalanche Current,Single Pulse (Note 1) | L= 0.5 mH | IAS | 42 | A | |||
| Single Pulse Avalanche Energy (Note 1) | L= 0.5 mH,VDD= 30 V | EAS | 441 | mJ | |||
| Thermal Characteristics (Ta=25 Unless Otherwise Specified) | |||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | 62.0 | /W | |||
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | 1.3 | /W | |||
| Electrical Characteristics (Ta=25 Unless Otherwise Specified) | |||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 60 | -- | -- | V | |
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | -- | 0.057 | -- | V/ | |
| Drain-Source Leakage Current | VDS= 60 V,VGS=0V | I DSS | -- | -- | 1 | uA | |
| Gate-Body Leakage Current | VGS= 20 V,VDS=0V | I GSS | -- | -- | 100 | nA | |
| Forward Transconductance | ID= 20 A,VDS= 5 V | gfs | -- | 17 | -- | S | |
| Gate Threshold Voltage | VDS= VDS ID=250uA | V GS(TH) | 2.0 | 3.0 | 4.0 | V | |
| Drain-Source On Resistance | ID= 20 A,VGS= 10 V | R DS(ON) | -- | 5.40 | 6.50 | m | |
| Drain-Source On Resistance | ID= 20 A,VGS= 4.5 V | R DS(ON) | -- | 6.21 | 8.71 | m | |
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | -- | 0.57 | -- | ||
| Input Capacitance | VDS= 30 V | C iss | -- | 5300.0 | -- | pF | |
| Output Capacitance | VGS= 0 V | C oss | -- | 300.0 | -- | pF | |
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | -- | 193.0 | -- | pF | |
| Turn-On Delay Time | VDS= 30 V, VGS= 10 V | t d(on) | -- | 13.0 | -- | ns | |
| Turn-On Rise Time | t r | -- | 8.0 | -- | ns | ||
| Turn-Off Delay Time | RL= 1.2 , RG= 10 | t d(off) | -- | 56.0 | -- | ns | |
| Turn-Off Rise Time | t f | -- | 15.0 | -- | ns | ||
| Total Gate Charge | VDS= 30 V | Q g | -- | 91.0 | -- | nC | |
| Gate-Source Charge | VGS= 10 V | Q gs | -- | 25.0 | -- | nC | |
| Gate-Drain Charge | ID= 20 A | Q gd | -- | 29.0 | -- | nC | |
| Max. Diode Forward Current | I S | -- | -- | 91 | A | ||
| Max. Pulsed Forward Current | I SM | -- | -- | 319 | A | ||
| Diode Forward Voltage | ID= 20 A,VGS=0V | V SD | -- | 0.85 | 1.2 | V | |
| Reverse Recovery Time | ID= 20 A,di/dt= 100 A/us | t rr | -- | 45 | -- | ns | |
| Reverse Recovery Charge | VGS= 10 V,VDS= 30 V | Q rr | -- | 63.0 | -- | uC | |
| OUTLINE DIMENSIONS (TO-220C) | |||||||
| Dimension | Unit | Min. | Typ. | Max. | Inches Min. | Inches Typ. | Inches Max. |
| A | mm | 9.50 | -- | 10.50 | 0.37 | -- | 0.41 |
| B | mm | 1.10 | -- | 1.65 | 0.04 | -- | 0.06 |
| C | mm | 4.15 | -- | 4.95 | 0.16 | -- | 0.19 |
| D | mm | 0.25 | -- | 0.65 | 0.01 | -- | 0.03 |
| E | mm | 14.50 | -- | 16.70 | 0.57 | -- | 0.66 |
| F | mm | 8.40 | -- | 9.95 | 0.33 | -- | 0.39 |
| G | mm | 12.15 | -- | 14.30 | 0.48 | -- | 0.56 |
| H | mm | 3.00 | -- | 3.80 | 0.12 | -- | 0.15 |
| J | mm | 1.05 | -- | 1.60 | 0.04 | -- | 0.06 |
| K | mm | 0.65 | -- | 0.95 | 0.03 | -- | 0.04 |
| M | mm | 2.10 | -- | 2.90 | 0.08 | -- | 0.11 |
| O | mm | 3.20 | -- | 4.10 | 0.13 | -- | 0.16 |
| P | mm | 2.45 | -- | 3.10 | 0.10 | -- | 0.12 |
| PACKING INFORMATION | |||||||
| Package Code | Package Method | Inner Box Size LWH(mm) | Quantity (Pcs/Inner Box) | Outer Carton Size LWH(mm) | Quantity (Pcs/Carton) | ||
| TO-220C | Tube Packaging | 560x155x55 | 1000 | 570284185 | 5000 | ||
Weight: App. 2.057 Grams (0.07255 Ounce)
Date: 2014-10-20
Revision: A/1
2411070957_NH-NTH065N06C_C41784114.pdf
Related Products
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
