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quality Three quadrant triac NH BTA16-800BW with ceramic insulation low on state voltage and rohs certified factory
quality Three quadrant triac NH BTA16-800BW with ceramic insulation low on state voltage and rohs certified factory

Three quadrant triac NH BTA16-800BW with ceramic insulation low on state voltage and rohs certified

Key Attributes
Model Number: BTA16-800BW
Product Custom Attributes
Holding Current (Ih):
60mA
Current - Gate Trigger(Igt):
50mA
Voltage - On State(Vtm):
1.65V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
16A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
160A
SCR Type:
1 TRIAC
Gate Trigger Voltage (Vgt):
1V
Operating Temperature:
-40℃~+150℃
Mfr. Part #:
BTA16-800BW
Package:
TO-220A
Product Description
BTA16-800XW Three-Quadrant TRIAC
Product Overview

The BTA16-800XW is a three-quadrant TRIAC from Guangdong Niuhang Specification Electronic Technology Co., Ltd. It features high di/dt for reliability, low on-state voltage for reduced power consumption, and a ceramic pad for internal insulation. This TRIAC is RoHS compliant and is designed for phase control operations in light dimmers and motor speed controllers, as well as ON/OFF control in heating regulation and induction motors.

Product Attributes
  • Brand: Niuhang (Trademark NH)
  • Origin: Guangdong, China
  • Certifications: RoHS Compliant
  • Package: TO-220A
  • Material: Ceramic Pad for Internal Insulation
Technical Specifications
Parameter Test Conditions Symbol BTA16-800XW (TW) BTA16-800XW (SW) BTA16-800XW (CW) BTA16-800XW (BW) Unit
Repetitive Peak Off-State Voltage VDRM 800 V
Repetitive Peak Reverse Voltage VRRM 800 V
RMS On-State Current Tc 80 IT(RMS) 16 A
Non Repetitive Surge Peak On-State Current F= 50 Hz, Tp= 20 ms ITSM 160 A
I 2T Value For Fusing Tp= 10 ms I2t 128 A
Critical Rate Of Rise Of On-State Current IG=2*IGT, tr10ns di/dt 100 A/s
Peak Gate Current Tp= 20 s,Tj= 150 IGM 4.0 A
Average Gate Power Dissipation Tj= 150 PG(AV) 1.0 W
Maximum Mounting Torque M3 srew TMM 1.1 N.m
Operating Junction Temperature Range TJ -40 to 150
Storage Temperature Range TSTD -40 to 150
Typical Thermal Resistance (Junction to Ambient) RJA 60.0 /W
Typical Thermal Resistance (Junction to Case) RJC 2.0 /W
Gate Trigger Current VD=12V,IT=0.1A IGT 5 10 35 50 mA
Gate Trigger Voltage VD=12V,IT=0.1A VGT 1.0 V
Holding Current IT=100mA IH 15 15 45 60 mA
Latching Current IG=1.2*IGT IL 15 (Quadrant -) 25 (Quadrant -) 50 (Quadrant -) 80 (Quadrant -) mA
Latching Current IG=1.2*IGT IL 20 (Quadrant ) 40 (Quadrant ) 70 (Quadrant ) 100 (Quadrant ) mA
Rise Of Off- State Voltage VD=2/3*VDRM,Gate open,Tj =150C dv/dt 80 400 1000 1500 V/us
Peak On-State Voltage IT= 16 A, Tj =25C VTM 1.65 V
Peak Repetitive Forward Blocking Current VD=VDRM, Tj =25C IDRM 5 uA
Peak Repetitive Forward Blocking Current VD=VDRM, Tj =125C IDRM 2 mA
Peak Repetitive Reverse Blocking Current VR=VRRM, Tj =25C IRRM 5 uA
Peak Repetitive Reverse Blocking Current VR=VRRM, Tj =125C IRRM 2 mA
Weight App. 2.057 Grams (0.07255 Ounce)

2411141613_NH-BTA16-800BW_C41784092.pdf
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