650 volt 60 amp IGBT onsemi FGA6560WDF field stop trench technology designed for welder and industrial
Key Attributes
Model Number:
FGA6560WDF
Product Custom Attributes
Pd - Power Dissipation:
306W
Td(off):
71ns
Td(on):
25.6ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
31pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.1V@60mA
Operating Temperature:
-55℃~+175℃
Gate Charge(Qg):
84nC@15V
Reverse Recovery Time(trr):
110ns
Switching Energy(Eoff):
520uJ
Turn-On Energy (Eon):
2.46mJ
Input Capacitance(Cies):
2.419nF
Pulsed Current- Forward(Ifm):
120A
Output Capacitance(Coes):
82pF
Mfr. Part #:
FGA6560WDF
Package:
TO-3PN
Product Description
Product Overview
The FGA6560WDF is a 650 V, 60 A Field Stop Trench IGBT from Fairchild Semiconductor, designed for welder and industrial applications. It offers an optimum performance with low conduction and switching losses, featuring a maximum junction temperature of 175C and a positive temperature coefficient for easy parallel operation. This IGBT boasts high current capability, low saturation voltage (1.8 V Typ. at 60 A), 100% testing for ILM, high input impedance, and fast switching. It is also RoHS compliant.
Product Attributes
- Brand: Fairchild Semiconductor
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: RoHS Compliant
Technical Specifications
| Symbol | Description | FGA6560WDF | Unit |
| Absolute Maximum Ratings | |||
| VCES | Collector to Emitter Voltage | 650 | V |
| VGES | Gate to Emitter Voltage | ± 20 | V |
| ILM (1) | Pulsed Collector Current @ TC = 25oC | 180 | A |
| IC (2) | Collector Current @ TC = 100oC | 60 | A |
| PD | Maximum Power Dissipation @ TC = 25oC | 306 | W |
| TJ | Operating Junction Temperature | -55 to +175 | oC |
| Tstg | Storage Temperature Range | -55 to +175 | oC |
| Thermal Characteristics | |||
| RJC(IGBT) | Thermal Resistance, Junction to Case, Max. | 0.49 | oC/W |
| RJC(Diode) | Thermal Resistance, Junction to Case, Max. | 1.75 | oC/W |
| RJA | Thermal Resistance, Junction to Ambient, Max. | 40 | oC/W |
| Electrical Characteristics of the IGBT | |||
| BVCES | Collector to Emitter Breakdown Voltage | 650 | V |
| ICES | Collector Cut-Off Current | 250 | µA |
| VGE(th) | G-E Threshold Voltage | 4.1 / 5.6 / 7.6 | V |
| VCE(sat) | Collector to Emitter Saturation Voltage | 1.8 / 2.3 | V |
| Cies | Input Capacitance | 2419 | pF |
| Coes | Output Capacitance | 82 | pF |
| Cres | Reverse Transfer Capacitance | 31 | pF |
| Switching Characteristics (TC = 25oC) | |||
| td(on) | Turn-On Delay Time | 25.6 | ns |
| tr | Rise Time | 67.2 | ns |
| td(off) | Turn-Off Delay Time | 71 | ns |
| tf | Fall Time | 22 | ns |
| Eon | Turn-On Switching Loss | 2.46 | mJ |
| Eoff | Turn-Off Switching Loss | 0.52 | mJ |
| Ets | Total Switching Loss | 2.98 | mJ |
| Electrical Characteristics of the Diode | |||
| VFM | Diode Forward Voltage | 1.8 / 2.3 | V |
| Erec | Reverse Recovery Energy | 233 | uJ |
| trr | Diode Reverse Recovery Time | 110 | ns |
| Qrr | Diode Reverse Recovery Charge | 400 | nC |
2410121623_onsemi-FGA6560WDF_C444007.pdf
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