N Channel Enhancement Mode Transistor NIKO-SEM PK6B2BA Featuring Low On Resistance and Switching
Key Attributes
Model Number:
PK6B2BA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
52A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
1.3V
Reverse Transfer Capacitance (Crss@Vds):
117pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
979pF@15V
Pd - Power Dissipation:
12W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
PK6B2BA
Package:
DFN-8-EP(6.1x5.2)
Product Description
Product Overview
NIKO-SEM PK6B2BA is an N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It offers high performance with a low on-resistance and efficient switching characteristics, making it suitable for power management solutions.
Product Attributes
- Brand: NIKO-SEM
- Model: PK6B2BA
- Package: PDFN 5x6P
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Unit | |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250A | 30 | V | |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1.3 | 2.3 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = 20V | 100 | nA | |
| Zero Gate Voltage Drain Current | IDSS | VDS = 24V, VGS = 0V | 1 | A | |
| VDS = 20V, VGS = 0V, TJ = 55 C | 10 | ||||
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID = 13A | 5.2 | 8.5 | m |
| VGS = 10V, ID = 13A | 3.9 | 6 | |||
| Forward Transconductance | gfs | VDS = 5V, ID = 13A | 86 | S | |
| Input Capacitance | Ciss | VGS = 0V, VDS = 15V, f = 1MHz | 979 | pF | |
| Output Capacitance | Coss | VGS = 0V, VDS = 15V, f = 1MHz | 192 | pF | |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 15V, f = 1MHz | 117 | pF | |
| Gate Resistance | Rg | VGS = 0V, VDS = 0V, f = 1MHz | 1.85 | ||
| Total Gate Charge | Qg | VDS = 15V , VGS = 10V, ID = 13A | 21 | nC | |
| VGS = 10V | |||||
| VGS = 4.5V | 11 | ||||
| Gate-Source Charge | Qgs | VDS = 15V , ID = 13A, VGS = 10V | 2.3 | nC | |
| Gate-Drain Charge | Qgd | VDS = 15V , ID = 13A, VGS = 10V | 6 | nC | |
| Turn-On Delay Time | td(on) | VDS = 15V , ID 13A, VGS = 10V, RGEN =6 | 17.2 | nS | |
| Rise Time | tr | VDS = 15V , ID 13A, VGS = 10V, RGEN =6 | 10 | nS | |
| Turn-Off Delay Time | td(off) | VDS = 15V , ID 13A, VGS = 10V, RGEN =6 | 36.8 | nS | |
| Fall Time | tf | VDS = 15V , ID 13A, VGS = 10V, RGEN =6 | 10 | nS | |
| Continuous Current (Source-Drain Diode) | IS | 25 | A | ||
| Forward Voltage (Source-Drain Diode) | VSD | IF = 13A, VGS = 0V | 1.2 | V | |
| Reverse Recovery Time | trr | IF = 13A, dlF/dt = 100A / S | 11.5 | nS | |
| Reverse Recovery Charge | Qrr | IF = 13A, dlF/dt = 100A / S | 2 | nC | |
| Drain-Source Voltage | VDS | 30 | V | ||
| Gate-Source Voltage | VGS | 20 | V | ||
| Continuous Drain Current | ID | TC = 25 C | 52 | A | |
| TC = 100 C | 33 | ||||
| TA = 25 C | 18 | ||||
| TA = 70 C | 14 | ||||
| Pulsed Drain Current | IDM | 120 | A | ||
| Avalanche Current | IAS | 25 | A | ||
| Avalanche Energy | EAS | L = 0.1mH | 31 | mJ | |
| Power Dissipation | PD | TC = 25 C | 31 | W | |
| TC = 100 C | 12 | ||||
| TA = 25 C | 3.9 | W | |||
| TA = 70 C | 2.5 | ||||
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 to 150 | C | ||
| Junction-to-Ambient Thermal Resistance (Steady-State) | RJA | Mounted on 1in FR-4 board with 2oz. Copper, still air | 57 | C / W | |
| Junction-to-Case Thermal Resistance (Steady-State) | RJC | 4 | C / W | ||
2411220721_NIKO-SEM-PK6B2BA_C532981.pdf
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