Axial lead ultrafast diode onsemi MUR2100ERLG designed for high surge current and power applications
Key Attributes
Model Number:
MUR2100ERLG
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
35A
Reverse Leakage Current (Ir):
10uA@1kV
Reverse Recovery Time (trr):
100ns
Operating Junction Temperature Range:
-65℃~+175℃@(Tj)
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
1kV
Voltage - Forward(Vf@If):
2.2V@2A
Current - Rectified:
2A
Mfr. Part #:
MUR2100ERLG
Package:
DO-41
Product Description
Product Overview
The MUR2100E is a state-of-the-art switch-mode power rectifier from ON Semiconductor, designed for high-performance applications. It features ultrafast recovery times, guaranteed avalanche energy for excellent protection against voltage transients, and a high operating junction temperature. This device is ideal for use in switching power supplies, inverters, and as free-wheeling diodes.
Product Attributes
- Brand: ON Semiconductor
- Pb-Free Devices: Yes
- Package Type: Axial Lead
- Material: Glass Passivated Junction, Epoxy Molded Case
Technical Specifications
| Rating | Symbol | Value | Unit | Notes |
| Peak Repetitive Reverse Voltage | VRRM, VRWM, VR | 1000 | V | |
| Average Rectified Forward Current | IF(AV) | 2.0 @ TA = 35C | A | Note 1 |
| Non-Repetitive Peak Surge Current | IFSM | 35 | A | Surge applied at rated load conditions, halfwave, single phase, 60 Hz |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -65 to +175 | C | |
| Maximum Instantaneous Forward Voltage | VF | 1.75 (TJ=150C), 2.20 (TJ=25C) | V | Note 2 (IF = 2.0 A) |
| Maximum Instantaneous Reverse Current | iR | 600 (TJ=100C), 10 (TJ=25C) | A | Note 2 (Rated dc Voltage) |
| Maximum Reverse Recovery Time | trr | 100 (IF=1.0A), 75 (IF=0.5A) | ns | See details in text |
| Maximum Forward Recovery Time | tfr | 75 | ns | See details in text |
| Controlled Avalanche Energy | WAVAL | 10 | mJ | See Test Circuit in Figure 6 |
| Avalanche Energy Guaranteed | 20 | mJoules | ||
| Recovery Time | 75 | Nanosecond | Ultrafast | |
| Operating Junction Temperature | 175 | C | Maximum |
2411220155_onsemi-MUR2100ERLG_C242294.pdf
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