Ignition Coil Driver onsemi ISL9V3040S3ST N Channel IGBT with Enhanced SCIS Energy and Voltage Clamp
Key Attributes
Model Number:
ISL9V3040S3ST
Product Custom Attributes
Td(off):
4.8us
Pd - Power Dissipation:
150W
Td(on):
700ns
Collector-Emitter Breakdown Voltage (Vces):
430V
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
1.6V@4V,6A
Operating Temperature:
-40℃~+175℃@(Tj)
Gate Charge(Qg):
17nC
Mfr. Part #:
ISL9V3040S3ST
Package:
TO-263AB
Product Description
Product Overview
The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are next-generation ignition IGBTs designed for automotive ignition circuits, specifically as coil drivers. They offer superior SCIS capability in space-saving D-Pak (TO-252), D-Pak (TO-263), TO-262, and TO-220 plastic packages. Internal diodes provide voltage clamping, eliminating the need for external components. EcoSPARK devices can be custom-made to specific clamp voltages.
Product Attributes
- Brand: ON Semiconductor (formerly Fairchild Semiconductor)
- Product Line: EcoSPARK
- Certifications: Not explicitly mentioned in the provided text.
- Origin: Not explicitly mentioned in the provided text.
- Material: Not explicitly mentioned in the provided text.
- Color: Not explicitly mentioned in the provided text.
Technical Specifications
| Part Number | Description | SCIS Energy (mJ) | Breakdown Voltage (V) | Continuous Collector Current (A) | Package |
|---|---|---|---|---|---|
| ISL9V3040D3S | N-Channel Ignition IGBT | 300 (TJ=25C) | BVCER: 430, BVECS: 24 | IC25: 21, IC110: 17 | D-Pak (TO-252) |
| ISL9V3040S3S | N-Channel Ignition IGBT | 300 (TJ=25C) | BVCER: 430, BVECS: 24 | IC25: 21, IC110: 17 | D-Pak (TO-263) |
| ISL9V3040P3 | N-Channel Ignition IGBT | 300 (TJ=25C) | BVCER: 430, BVECS: 24 | IC25: 21, IC110: 17 | TO-220 |
| ISL9V3040S3 | N-Channel Ignition IGBT | 300 (TJ=25C) | BVCER: 430, BVECS: 24 | IC25: 21, IC110: 17 | TO-262 |
Electrical Characteristics
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| BVCER | Collector to Emitter Breakdown Voltage | IC = 2mA, VGE = 0, RG = 1K, TJ = -40 to 150C | 370 | 400 | 430 | V |
| BVECS | Emitter to Collector Breakdown Voltage | IC = -75mA, VGE = 0V, TC = 25C | 30 | - | - | V |
| VCE(SAT) | Collector to Emitter Saturation Voltage | IC = 6A, VGE = 4V, TC = 25C | - | 1.25 | 1.60 | V |
| VCE(SAT) | Collector to Emitter Saturation Voltage | IC = 10A, VGE = 4.5V, TC = 150C | - | 1.58 | 1.80 | V |
| VGE(TH) | Gate to Emitter Threshold Voltage | IC = 1.0mA, VCE = VGE, TC = 25C | 1.3 | - | 2.2 | V |
| td(ON)R | Current Turn-On Delay Time-Resistive | VCE = 14V, RL = 1, VGE = 5V, RG = 1K, TJ = 25C | - | 0.7 | 4 | s |
| trR | Current Rise Time-Resistive | - | 2.1 | 7 | s | |
| td(OFF)L | Current Turn-Off Delay Time-Inductive | VCE = 300V, L = 500Hy, VGE = 5V, RG = 1K, TJ = 25C | - | 4.8 | 15 | s |
| tfL | Current Fall Time-Inductive | - | 2.8 | 15 | s |
Maximum Ratings
| Symbol | Parameter | Ratings | Units |
|---|---|---|---|
| BVCER | Collector to Emitter Breakdown Voltage | 430 | V |
| BVECS | Emitter to Collector Voltage - Reverse Battery Condition | 24 | V |
| ESCIS25 | SCIS Energy at Starting TJ = 25C, ISCIS = 14.2A, L = 3.0 mHy | 300 | mJ |
| ESCIS150 | SCIS Energy at Starting TJ = 150C, ISCIS = 10.6A, L = 3.0 mHy | 170 | mJ |
| IC25 | Collector Current Continuous, At TC = 25C | 21 | A |
| IC110 | Collector Current Continuous, At TC = 110C | 17 | A |
| VGEM | Gate to Emitter Voltage Continuous | 10 | V |
| PD | Power Dissipation Total TC = 25C | 150 | W |
| TJ | Operating Junction Temperature Range | -40 to 175 | C |
| TSTG | Storage Junction Temperature Range | -40 to 175 | C |
| TL | Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) | 300 | C |
| Tpkg | Max Lead Temp for Soldering (Package Body for 10s) | 260 | C |
| ESD | Electrostatic Discharge Voltage at 100pF, 1500 | 4 | kV |
2410121854_onsemi-ISL9V3040S3ST_C898702.pdf
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