High current Cascode GaN transistor NITRIDE YHJ-65P80CF designed for power electronics applications
Key Attributes
Model Number:
YHJ-65P80CF
Product Custom Attributes
Mfr. Part #:
YHJ-65P80CF
Package:
DFN-4(9.8x10.4)
Product Description
Product Overview
The YHJ-65P080CF is a normally-off Cascode GaN High Electron Mobility Transistor (HEMT) device designed for high power applications. It offers high breakdown voltage, high current capability, and high operating speed. Its Cascode configuration ensures compatibility with standard gate drive voltages, making it suitable for demanding power electronics systems.
Product Attributes
- Brand: Jiangxi Yuhongjin Chip Technology Co., Ltd.
- Part Number: YHJ-65P080CF
- Package: DFN 9.8 x 10.4 mm
- Confidentiality: YHJ Confidential
- Datasheet Version: Preliminary
- Date: 2024/01/17
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Drain-source voltage | VDSS | 650 | V | VGS=0V |
| Gate threshold voltage | VGS(th) | 1.7 - 2.2 | V | VDS= 10V ,ID=1mA |
| Static drain-source on- resistance | RDS(on) | 80 - 95 | m | VGS=6V, ID=5A, TJ=25oC |
| Static drain-source on- resistance | RDS(on) | - 180 | m | VGS=6V, ID=5A, TJ=150oC |
| Drain-source leakage current | IDSS | - 2 - 10 | A | VGS =0V, VDS =650V, TJ=25oC |
| Drain-source leakage current | IDSS | - 10 | A | VGS =0V, VDS =650V, TJ=150oC |
| Gate-to-source forward leakage current | IGSS | - 100 | nA | VGS=20V |
| Gate-to-source reverse leakage current | IGSS | - -100 | nA | VGS=-20V |
| Input capacitance | CISS | 910 | pF | VGS=0V, VDS=400V, f=1MHz |
| Output capacitance | COSS | 26.4 | pF | |
| Reverse transfer capacitance | CRSS | 3.8 | pF | |
| Gate charge | QG | 12 | nC | VGS=0~10V, VDS=400V, IDS =5A |
| Gate-source charge | QGS | 4.3 | nC | |
| Output charge | QOSS | 36 | nC | VGS=0V, VDS=0~400V |
| Reverse recovery charge | QRR | 15 | nC | Is=5A, VDS =400V |
| Total power dissipation | Ptot | 119 | W | @TC = 25oC |
| Drain current (continuous) | ID | 25.5 | A | at TC = 25C operation |
| Drain current (continuous) | ID | 16.1 | A | at TC = 100C operation |
| Pulsed drain current | IDM | 105 | A | (pulse width: 10s) |
| Thermal resistance junction-ambient | RJA | 64 | C/W | |
| Thermal resistance junction-case | RJC | 1.05 | C/W | |
| Operating temperature | Tc | -55 to +150 | C | Case |
| Junction temperature | TJ | -55 to +150 | C | |
| Storage temperature | TS | -55 to +150 | C | |
| Soldering peak temperature | TSOLD | 260 | C | For 10 sec., 1.6mm from the case |
Applications
- Switch Mode Power Supplies (SMPS)
- AC-DC/ DC-DC Converters
- Motor Drives
2408011058_NITRIDE-YHJ-65P80CF_C37328927.pdf
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