High voltage IGBT onsemi FGHL40T120SWD designed for solar UPS and energy storage system applications
Key Attributes
Model Number:
FGHL40T120SWD
Product Custom Attributes
Pd - Power Dissipation:
469W
Td(off):
118ns
Td(on):
22.4ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
16.2pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.6V@40mA
Operating Temperature:
-55℃~+175℃
Gate Charge(Qg):
118nC@15V
Reverse Recovery Time(trr):
13ns
Switching Energy(Eoff):
700uJ
Turn-On Energy (Eon):
1.1mJ
Input Capacitance(Cies):
3.384nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
139pF
Mfr. Part #:
FGHL40T120SWD
Package:
TO-247
Product Description
Product Overview
The FGHL40T120SWD is a N-Channel, Field Stop VII (FS7) IGBT with a non-SCR design, utilizing the latest IGBT technology and Gen7 Diode in a TO247 3-lead package. It offers optimal performance with low switching and conduction losses, making it ideal for high-efficiency operations in applications such as Solar, UPS, and Energy Storage Systems (ESS).
Product Attributes
- Brand: onsemi
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| IGBT - MAXIMUM RATINGS | ||||
| CollectortoEmitter Voltage | VCES | 1200 | V | |
| GatetoEmitter Voltage | VGES | ±20 | V | |
| Transient GatetoEmitter Voltage | ±30 | V | ||
| Collector Current | IC | 70 | A | TC = 25°C (Note 1) |
| Collector Current | IC | 40 | A | TC = 100°C |
| Power Dissipation | PD | 469 | W | TC = 25°C |
| Power Dissipation | PD | 234 | W | TC = 100°C |
| Pulsed Collector Current | ICM | 160 | A | TC = 25°C, tp = 10 µs (Note 2) |
| DIODE - MAXIMUM RATINGS | ||||
| Diode Forward Current | IF | 80 | A | TC = 25°C (Note 1) |
| Diode Forward Current | IF | 40 | A | TC = 100°C |
| Pulsed Diode Maximum Forward Current | IFM | 160 | A | TC = 25°C, tp = 10 µs |
| GENERAL RATINGS | ||||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to +175 | °C | |
| Lead Temperature for Soldering Purposes | TL | 260 | °C | |
| THERMAL CHARACTERISTICS | ||||
| Thermal Resistance, JunctiontoCase for IGBT | R JC | 0.32 | °C/W | |
| Thermal Resistance, JunctiontoCase for Diode | R JCD | 0.57 | °C/W | |
| Thermal Resistance, JunctiontoAmbient | R JA | 40 | °C/W | |
| IGBT - ELECTRICAL CHARACTERISTICS | ||||
| CollectortoEmitter Breakdown Voltage | BVCES | 1200 | V | VGE = 0 V, IC = 5 mA |
| CollectortoEmitter Breakdown Voltage Temperature Coefficient | ΔBVCES /ΔTJ | 1226 | mV/°C | VGE = 0 V, IC = 5 mA |
| Zero Gate Voltage Collector Current | ICES | 40 | µA | VGE = 0 V, VCE = VCES |
| GatetoEmitter Leakage Current | IGES | ±400 | nA | VGE = 20 V, VCE = 0 V |
| Gate Threshold Voltage | VGE(th) | 5.6 - 7.4 | V | VGE = VCE, IC = 40 mA |
| CollectortoEmitter Saturation Voltage | VCE(sat) | 1.35 - 2.0 | V | VGE = 15 V, IC = 40 A, TJ = 25°C |
| CollectortoEmitter Saturation Voltage | VCE(sat) | 2.26 | V | VGE = 15 V, IC = 40 A, TJ = 175°C |
| Input Capacitance | Cies | 3384 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Output Capacitance | Coes | 139 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Reverse Transfer Capacitance | Cres | 16.2 | pF | VCE = 30 V, VGE = 0 V, f = 1 MHz |
| Gate Charge Total | Qg | 118 | nC | VCE = 600 V, VGE = 15 V, IC = 40 A |
| Gate Charge | Qge | 28.8 | nC | VCE = 600 V, VGE = 15 V, IC = 40 A |
| Gate Charge | Qgc | 45.4 | nC | VCE = 600 V, VGE = 15 V, IC = 40 A |
| IGBT - SWITCHING CHARACTERISTICS (TJ = 25°C) | ||||
| Turnon Delay Time | td(on) | 22.4 | ns | VCE = 600 V, VGE = 0/15 V, IC = 20 A, RG = 4.7 Ω |
| Turnoff Delay Time | td(off) | 160 | ns | VCE = 600 V, VGE = 0/15 V, IC = 20 A, RG = 4.7 Ω |
| Rise Time | tr | 14.4 | ns | VCE = 600 V, VGE = 0/15 V, IC = 20 A, RG = 4.7 Ω |
| Fall Time | tf | 78.4 | ns | VCE = 600 V, VGE = 0/15 V, IC = 20 A, RG = 4.7 Ω |
| Turnon Switching Loss | Eon | 1.1 | mJ | VCE = 600 V, VGE = 0/15 V, IC = 20 A, RG = 4.7 Ω |
| Turnoff Switching Loss | Eoff | 0.7 | mJ | VCE = 600 V, VGE = 0/15 V, IC = 20 A, RG = 4.7 Ω |
| Total Switching Loss | Ets | 1.8 | mJ | VCE = 600 V, VGE = 0/15 V, IC = 20 A, RG = 4.7 Ω |
| Turnon Delay Time | td(on) | 24.0 | ns | VCE = 600 V, VGE = 0/15 V, IC = 40 A, RG = 4.7 Ω |
| Turnoff Delay Time | td(off) | 118 | ns | VCE = 600 V, VGE = 0/15 V, IC = 40 A, RG = 4.7 Ω |
| Rise Time | tr | 35.2 | ns | VCE = 600 V, VGE = 0/15 V, IC = 40 A, RG = 4.7 Ω |
| Fall Time | tf | 67.4 | ns | VCE = 600 V, VGE = 0/15 V, IC = 40 A, RG = 4.7 Ω |
| Turnon Switching Loss | Eon | 2.4 | mJ | VCE = 600 V, VGE = 0/15 V, IC = 40 A, RG = 4.7 Ω |
| Turnoff Switching Loss | Eoff | 1.1 | mJ | VCE = 600 V, VGE = 0/15 V, IC = 40 A, RG = 4.7 Ω |
| Total Switching Loss | Ets | 3.5 | mJ | VCE = 600 V, VGE = 0/15 V, IC = 40 A, RG = 4.7 Ω |
| IGBT - SWITCHING CHARACTERISTICS (TJ = 175°C) | ||||
| Turnon Delay Time | td(on) | 19.2 | ns | VCE = 600 V, VGE = 0/15 V, IC = 20 A, RG = 4.7 Ω |
| Turnoff Delay Time | td(off) | 197 | ns | VCE = 600 V, VGE = 0/15 V, IC = 20 A, RG = 4.7 Ω |
| Rise Time | tr | 16.0 | ns | VCE = 600 V, VGE = 0/15 V, IC = 20 A, RG = 4.7 Ω |
| Fall Time | tf | 126 | ns | VCE = 600 V, VGE = 0/15 V, IC = 20 A, RG = 4.7 Ω |
| Turnon Switching Loss | Eon | 1.8 | mJ | VCE = 600 V, VGE = 0/15 V, IC = 20 A, RG = 4.7 Ω |
| Turnoff Switching Loss | Eoff | 1.1 | mJ | VCE = 600 V, VGE = 0/15 V, IC = 20 A, RG = 4.7 Ω |
| Total Switching Loss | Ets | 3.0 | mJ | VCE = 600 V, VGE = 0/15 V, IC = 20 A, RG = 4.7 Ω |
| Turnon Delay Time | td(on) | 20.8 | ns | VCE = 600 V, VGE = 0/15 V, IC = 40 A, RG = 4.7 Ω |
| Turnoff Delay Time | td(off) | 138 | ns | VCE = 600 V, VGE = 0/15 V, IC = 40 A, RG = 4.7 Ω |
| Rise Time | tr | 35.2 | ns | VCE = 600 V, VGE = 0/15 V, IC = 40 A, RG = 4.7 Ω |
| Fall Time | tf | 99.6 | ns | VCE = 600 V, VGE = 0/15 V, IC = 40 A, RG = 4.7 Ω |
| Turnon Switching Loss | Eon | 3.6 | mJ | VCE = 600 V, VGE = 0/15 V, IC = 40 A, RG = 4.7 Ω |
| Turnoff Switching Loss | Eoff | 1.5 | mJ | VCE = 600 V, VGE = 0/15 V, IC = 40 A, RG = 4.7 Ω |
| Total Switching Loss | Ets | 5.2 | mJ | VCE = 600 V, VGE = 0/15 V, IC = 40 A, RG = 4.7 Ω |
| DIODE - ELECTRICAL CHARACTERISTICS | ||||
| Forward Voltage | VF | 1.62 - 2.22 | V | IF = 40 A, TJ = 25°C |
| Forward Voltage | VF | 1.84 | V | IF = 40 A, TJ = 175°C |
| DIODE - SWITCHING CHARACTERISTICS (INDUCTIVE LOAD) | ||||
| Reverse Recovery Time | trr | 113 | ns | VR = 600 V, IF = 20 A, dIF/dt = 1000 A/µs, TJ = 25°C |
| Reverse Recovery Charge | Qrr | 1433 | nC | VR = 600 V, IF = 20 A, dIF/dt = 1000 A/µs, TJ = 25°C |
| Reverse Recovery Energy | EREc | 0.4 | mJ | VR = 600 V, IF = 20 A, dIF/dt = 1000 A/µs, TJ = 25°C |
| Peak Reverse Recovery Current | IRRM | 25.3 | A | VR = 600 V, IF = 20 A, dIF/dt = 1000 A/µs, TJ = 25°C |
| Reverse Recovery Time | trr | 185 | ns | VR = 600 V, IF = 40 A, dIF/dt = 1000 A/µs, TJ = 25°C |
| Reverse Recovery Charge | Qrr | 2512 | nC | VR = 600 V, IF = 40 A, dIF/dt = 1000 A/µs, TJ = 25°C |
| Reverse Recovery Energy | EREc | 0.7 | mJ | VR = 600 V, IF = 40 A, dIF/dt = 1000 A/µs, TJ = 25°C |
| Peak Reverse Recovery Current | IRRM | 26.9 | A | VR = 600 V, IF = 40 A, dIF/dt = 1000 A/µs, TJ = 25°C |
| Reverse Recovery Time | trr | 193 | ns | VR = 600 V, IF = 20 A, dIF/dt = 1000 A/µs, TJ = 175°C |
| Reverse Recovery Charge | Qrr | 3258 | nC | VR = 600 V, IF = 20 A, dIF/dt = 1000 A/µs, TJ = 175°C |
| Reverse Recovery Energy | EREc | 1.0 | mJ | VR = 600 V, IF = 20 A, dIF/dt = 1000 A/µs, TJ = 175°C |
| Peak Reverse Recovery Current | IRRM | 33.6 | A | VR = 600 V, IF = 20 A, dIF/dt = 1000 A/µs, TJ = 175°C |
| Reverse Recovery Time | trr | 275 | ns | VR = 600 V, IF = 40 A, dIF/dt = 1000 A/µs, TJ = 175°C |
| Reverse Recovery Charge | Qrr | 5211 | nC | VR = 600 V, IF = 40 A, dIF/dt = 1000 A/µs, TJ = 175°C |
| Reverse Recovery Energy | EREc | 1.7 | mJ | VR = 600 V, IF = 40 A, dIF/dt = 1000 A/µs, TJ = 175°C |
| Peak Reverse Recovery Current | IRRM | 37.9 | A | VR = 600 V, IF = 40 A, dIF/dt = 1000 A/µs, TJ = 175°C |
2410122001_onsemi-FGHL40T120SWD_C22379660.pdf
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