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quality 750 V Silicon Carbide SiC FET onsemi UJ4SC075011K4S with standard gate drive and low reverse recovery factory
quality 750 V Silicon Carbide SiC FET onsemi UJ4SC075011K4S with standard gate drive and low reverse recovery factory

750 V Silicon Carbide SiC FET onsemi UJ4SC075011K4S with standard gate drive and low reverse recovery

Key Attributes
Model Number: UJ4SC075011K4S
Product Custom Attributes
Mfr. Part #:
UJ4SC075011K4S
Package:
TO-247-4
Product Description

Product Description

The UJ4SC075011K4S is a 750 V, 11 m SiC FET designed with a unique cascode configuration, co-packaging a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET device. Its standard gate-drive characteristics enable it to serve as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in the TO-247-4L package, this device features ultra-low gate charge and exceptional reverse recovery, making it ideal for switching inductive loads and applications requiring standard gate drive.

Typical Applications: EV Charging, PV Inverters, Switch Mode Power Supplies, Power Factor Correction Modules, Motor Drives, Induction Heating.

Product Attributes

  • Brand: onsemi
  • Material: Silicon Carbide (SiC)
  • Certifications: Pb-Free, Halogen Free, RoHS Compliant
  • Package: TO-247-4L

Technical Specifications

Parameter Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage (BVDS) VGS = 0 V, ID = 1 mA 750 - - V
Total Drain Leakage Current (IDSS) VDS = 750 V, VGS = 0 V, TJ = 25 C - 3.5 60 A
Total Drain Leakage Current (IDSS) VDS = 750 V, VGS = 0 V, TJ = 175C - 45 - A
Total Gate Leakage Current (IGSS) VDS = 0 V , TJ = 25 C, VGS = 20 V / + 20 V - 20 - nA
Drain-Source On-resistance (RDS(on)) VGS = 12 V, ID = 60 A, TJ = 25 C - 11 14.2 m
Drain-Source On-resistance (RDS(on)) VGS = 12 V, ID = 60 A, TJ = 125 C - 18.4 - m
Drain-Source On-resistance (RDS(on)) VGS = 12 V, ID = 60 A, TJ = 175 C - 24.2 - m
Gate Threshold Voltage (VG(th)) VDS = 5 V, ID = 10 mA 3.5 4.5 5.5 V
Gate Resistance (RG) f = 1 MHz, open drain - 2.3 -
Diode Continuous Forward Current (IS) TC = 25 C - - 104 A
Diode Pulse Current (IS,pulse) TC = 25 C - - 300 A
Forward Voltage (VFSD) VGS = 0 V, IS = 30 A, TJ = 25 C - 1.1 1.24 V
Forward Voltage (VFSD) VGS = 0 V, IS = 30 A, TJ = 175 C - 1.2 - V
Reverse Recovery Charge (Qrr) VDS = 400 V, IS = 60 A, VGS = 0 V, RG_EXT = 5 , di/dt = 2500 A/s, TJ = 25 C - 288 - nC
Reverse Recovery Charge (Qrr) VDS = 400 V, IS = 60 A, VGS = 0 V, RG_EXT = 5 , di/dt = 2500 A/s, TJ = 150 C - 292 - nC
Reverse Recovery Time (trr) VDS = 400 V, IS = 60 A, VGS = 0 V, RG_EXT = 5 , di/dt = 2500 A/s, TJ = 25 C - 26 - ns
Reverse Recovery Time (trr) VDS = 400 V, IS = 60 A, VGS = 0 V, RG_EXT = 5 , di/dt = 2500 A/s, TJ = 150 C - 26 - ns
Input Capacitance (Ciss) VDS = 400 V, VGS = 0 V, f = 100 kHz - 3245 - pF
Output Capacitance (Coss) VDS = 400 V, VGS = 0 V, f = 100 kHz - 178 - pF
Reverse Transfer Capacitance (Crss) VDS = 400 V, VGS = 0 V, f = 100 kHz - 1.2 - pF
Effective Output Capacitance, Energy Related (Coss(er)) VDS = 0 V to 400 V, VGS = 0 V - 225 - pF
Effective Output Capacitance, Time Related (Coss(tr)) VDS = 0 V to 400 V, VGS = 0 V - 470 - pF
Stored Energy in COSS (Eoss) VDS = 400 V, VGS = 0 V - 18 - J
Total Gate Charge (QG) VDS = 400 V, ID = 60 A, VGS = 0 V to 15 V - 75 - nC
Gate-Drain Charge (QGD) VDS = 400 V, ID = 60 A, VGS = 0 V to 15 V - 13 - nC
Gate-Source Charge (QGS) VDS = 400 V, ID = 60 A, VGS = 0 V to 15 V - 22 - nC
Turn-on Delay Time (td(on)) VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C - 19 - ns
Rise Time (tr) VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C - 26 - ns
Turn-off Delay Time (td(off)) VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C - 65 - ns
Fall Time (tf) VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C - 9 - ns
Turn-on Energy (EON) VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C - 257 - J
Turn-off Energy (EOFF) VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C - 107 - J
Total Switching Energy (ETOTAL) VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C - 364 - J
Turn-on Delay Time (td(on)) VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C - 19 - ns
Rise Time (tr) VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C - 28 - ns
Turn-off Delay Time (td(off)) VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C - 73 - ns
Fall Time (tf) VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C - 9 - ns
Turn-on Energy (EON) VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C - 320 - J
Turn-off Energy (EOFF) VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C - 125 - J
Total Switching Energy (ETOTAL) VDS = 400 V, ID = 60 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C - 445 - J

2511111607_onsemi-UJ4SC075011K4S_C45343225.pdf

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