Pb Free Semiconductor N Channel JFET Transistor onsemi MMBFU310LT1G RoHS Compliant Electronic Device
Key Attributes
Model Number:
MMBFU310LT1G
Product Custom Attributes
Ciss-Input Capacitance:
5pF@10V
Operating Temperature:
-55℃~+150℃@(Tj)
Pd - Power Dissipation:
225mW
Drain Current (Idss):
24mA@10V
FET Type:
-
RDS(on):
-
Gate-Source Breakdown Voltage (Vgss):
25V
Gate-Source Cutoff Voltage (VGS(off)):
2.5V@1nA
Mfr. Part #:
MMBFU310LT1G
Package:
SOT-23
Product Description
Product Overview
The MMBFU310LT1G is an N-Channel JFET Transistor designed for various electronic applications. This device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, ensuring environmental responsibility. It offers reliable performance with key features like specified breakdown voltage, low leakage currents, and defined on-characteristics.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (ON Semiconductor)
- Certifications: PbFree, Halogen Free/BFR Free, RoHS Compliant
Technical Specifications
| Characteristic | Symbol | Min | Max | Unit | Notes |
| OFF CHARACTERISTICS | |||||
| GateSource Breakdown Voltage | V(BR)GSS | -25 | - | Vdc | (IG = 1.0 mAdc, VDS = 0) |
| Gate Leakage Current | IG1SS | - | -150 | pA | (VGS = 15 Vdc, VDS = 0) |
| Gate Leakage Current (TA = 125C) | IG2SS | - | -150 | nAdc | (VGS = 15 Vdc, VDS = 0, TA = 125C) |
| Gate Source Cutoff Voltage | VGS(off) | -2.5 | -6.0 | Vdc | (VDS = 10 Vdc, ID = 1.0 nAdc) |
| ON CHARACTERISTICS | |||||
| ZeroGateVoltage Drain Current | IDSS | 24 | 60 | mAdc | (VDS = 10 Vdc, VGS = 0) |
| GateSource Forward Voltage | VGS(f) | - | 1.0 | Vdc | (IG = 10 mAdc, VDS = 0) |
| SMALLSIGNAL CHARACTERISTICS | |||||
| Forward Transfer Admittance | |Yfs| | 10 | 18 | mmhos | (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |
| Output Admittance | |yos| | - | 250 | mhos | (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |
| Input Capacitance | Ciss | - | 5.0 | pF | (VGS = 10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) |
| Reverse Transfer Capacitance | Crss | - | 2.5 | pF | (VGS = 10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) |
| MAXIMUM RATINGS | |||||
| DrainSource Voltage | VDS | - | 25 | Vdc | |
| GateSource Voltage | VGS | - | 25 | Vdc | |
| Gate Current | IG | - | 10 | mAdc | |
| THERMAL CHARACTERISTICS | |||||
| Total Device Dissipation (FR5 Board, TA = 25C) | PD | - | 225 | mW | (Note 1) |
| Derate above 25C | - | 1.8 | mW/C | ||
| Thermal Resistance, JunctiontoAmbient | R JA | - | 556 | C/W | |
| Junction and Storage Temperature | TJ, Tstg | -55 | +150 | C | |
2410010303_onsemi-MMBFU310LT1G_C146720.pdf
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