switching IGBT onsemi FGH80N60FD2TU designed for industrial power control and induction heating systems
Key Attributes
Model Number:
FGH80N60FD2TU
Product Custom Attributes
Mfr. Part #:
FGH80N60FD2TU
Package:
TO-247-3
Product Description
Product Overview
Utilizing novel field stop IGBT technology, ON Semiconductor's FGH80N60FD2 offers optimal performance for induction heating and PFC applications. This IGBT is designed for scenarios requiring low conduction and switching losses, featuring high current capability and a low saturation voltage of 1.8 V (Typ.) at 40 A. It boasts high input impedance and fast switching characteristics, making it a suitable choice for demanding applications.
Product Attributes
- Brand: ON Semiconductor
- Certifications: PbFree, RoHS Compliant
- Package: TO-247-3LD
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Collector to Emitter Voltage | VCES | 600 | V | |||
| GateEmitter Voltage | VGES | ±20 | V | |||
| Collector Current | IC | TC = 25°C | 80 | A | ||
| Collector Current | IC | TC = 100°C | 40 | A | ||
| Pulsed Collector Current | ICM (Note 1) | TC = 25°C | 160 | A | ||
| Maximum Power Dissipation | PD | TC = 25°C | 290 | W | ||
| Maximum Power Dissipation | PD | TC = 100°C | 116 | W | ||
| Operating Junction Temperature | TJ | -55 | +150 | °C | ||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds | TL | 300 | °C | |||
| THERMAL CHARACTERISTICS | ||||||
| Thermal Resistance, Junction to Case (IGBT) | R JC (IGBT) | 0.43 | °C/W | |||
| Thermal Resistance, Junction to Case (Diode) | R JA (Diode) | 1.45 | °C/W | |||
| Thermal Resistance, Junction to Ambient | R JA | 40 | °C/W | |||
| ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) | ||||||
| CollectorEmitter Breakdown Voltage | BVCES | VGE = 0 V, IC = 250 µA | 600 | - | - | V |
| Temperature Coefficient of Breakdown Voltage | BVCES / TJ | VGE = 0 V, IC = 250 µA | - | 0.6 | - | V/°C |
| Collector CutOff Current | ICES | VCE = VCES, VGE = 0 V | - | - | 250 | µA |
| GE Leakage Current | IGES | VGE = VGES, VCE = 0 V | - | - | ±400 | nA |
| GE Threshold Voltage | VGE(th) | IC = 250 µA, VCE = VGE | 4.5 | 5.5 | 7.0 | V |
| Collector to Emitter Saturation Voltage | VCE(sat) | IC = 40 A, VGE = 15 V | - | 1.8 | 2.4 | V |
| Collector to Emitter Saturation Voltage | VCE(sat) | IC = 40 A, VGE = 15 V, TC = 125°C | - | 2.05 | - | V |
| Input Capacitance | Cies | VCE = 30 V, VGE = 0 V, f = 1 MHz | - | 2110 | - | pF |
| Output Capacitance | Coes | - | 200 | - | pF | |
| Reverse Transfer Capacitance | Cres | - | 60 | - | pF | |
| SWITCHING CHARACTERISTICS (TC = 25°C unless otherwise noted) | ||||||
| TurnOn Delay Time | Td(on) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load | - | 21 | - | ns |
| Rise Time | Tr | - | 56 | - | ns | |
| TurnOff Delay Time | Td(off) | - | 126 | - | ns | |
| Fall Time | Tf | - | 50 | 100 | ns | |
| TurnOn Switching Loss | Eon | - | 1 | 1.5 | mJ | |
| TurnOff Switching Loss | Eoff | - | 0.52 | 0.78 | mJ | |
| Total Switching Loss | Ets | - | 1.52 | 2.28 | mJ | |
| SWITCHING CHARACTERISTICS (TC = 125°C unless otherwise noted) | ||||||
| TurnOn Delay Time | Td(on) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load | - | 20 | - | ns |
| Rise Time | Tr | - | 54 | - | ns | |
| TurnOff Delay Time | Td(off) | - | 131 | - | ns | |
| Fall Time | Tf | - | 70 | - | ns | |
| TurnOn Switching Loss | Eon | - | 1.1 | - | mJ | |
| TurnOff Switching Loss | Eoff | - | 0.78 | - | mJ | |
| Total Switching Loss | Ets | - | 1.88 | - | mJ | |
| Total Gate Charge | Qg | VCE = 400 V, IC = 40 A, VGE = 15 V | - | 120 | - | nC |
| GateEmitter Charge | Qge | - | 14 | - | nC | |
| GateCollector Charge | Qgc | - | 58 | - | nC | |
| ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted) | ||||||
| Diode Forward Voltage | VFM | IF = 15 A, TC = 25°C | - | 1.2 | 1.5 | V |
| Diode Forward Voltage | VFM | IF = 15 A, TC = 125°C | - | 1.0 | - | V |
| Diode Reverse Recovery Time | Trr | IF = 15 A, diF/dt = 200 A/µs, TC = 25°C | - | 61 | - | ns |
| Diode Reverse Recovery Time | Trr | IF = 15 A, diF/dt = 200 A/µs, TC = 125°C | - | 125 | - | ns |
| Diode Reverse Recovery Current | Irr | TC = 25°C | - | 4.8 | - | A |
| Diode Reverse Recovery Current | Irr | TC = 125°C | - | 8.4 | - | A |
| Diode Reverse Recovery Charge | Qrr | TC = 25°C | - | 146 | - | nC |
| Diode Reverse Recovery Charge | Qrr | TC = 125°C | - | 525 | - | nC |
2411220521_onsemi-FGH80N60FD2TU_C898199.pdf
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