N channel transistor onsemi MMBFJ112 designed for low level analog switching and sample hold circuit

Key Attributes
Model Number: MMBFJ112
Product Custom Attributes
Ciss-Input Capacitance:
-
Operating Temperature:
-55℃~+150℃@(Tj)
Pd - Power Dissipation:
350mW
Drain Current (Idss):
5mA@15V
FET Type:
-
RDS(on):
50Ω
Gate-Source Breakdown Voltage (Vgss):
35V
Gate-Source Cutoff Voltage (VGS(off)):
1V@1uA
Mfr. Part #:
MMBFJ112
Package:
SOT-23-3L
Product Description

Product Overview

The J111/J112/J113 and MMBFJ111/MMBFJ112/MMBFJ113 are N-Channel switches designed for low-level analog switching, sample and hold circuits, and chopper-stabilized amplifiers. These devices feature interchangeable Source and Drain terminals.

Product Attributes

  • Brand: ON Semiconductor
  • Origin: Sourced from process 51
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

Part NumberPackageTop MarkDrain-Gate Voltage (VDG) (V)Gate-Source Voltage (VGS) (V)Forward Gate Current (IGF) (mA)Operating and Storage Junction Temperature Range (TJ, TSTG) (C)Total Device Dissipation (PD) (mW)Drain-Source On Resistance (rDS(on)) ()Gate-Source Cut-Off Voltage (VGS(off)) (V)Zero-Gate Voltage Drain Current (IDSS) (mA)Drain Cutoff Leakage Current (ID(off)) (nA)Drain-Gate Off Capacitance (Cdg(off)) (pF)Source-Gate Off Capacitance (Csg(off)) (pF)
J111TO-92J11135-3550-55 to 15062530-3.0 to -10.0201.05.05.0
J112TO-92J11235-3550-55 to 15062550-1.0 to -5.05.01.05.05.0
J113TO-92J11335-3550-55 to 150625100-0.5 to -3.02.01.05.05.0
MMBFJ111SOT-236P35-3550-55 to 15035030-3.0 to -10.0201.05.05.0
MMBFJ112SOT-236R35-3550-55 to 15035050-1.0 to -5.05.01.05.05.0
MMBFJ113SOT-236S35-3550-55 to 150350100-0.5 to -3.02.01.05.05.0

2410121616_onsemi-MMBFJ112_C258195.pdf

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