P Channel JFET Chopper Device onsemi SMMBFJ177LT1G Pb Free Halogen Free RoHS Compliant SOT 23 Package

Key Attributes
Model Number: SMMBFJ177LT1G
Product Custom Attributes
Ciss-Input Capacitance:
11pF@10V
Operating Temperature:
-55℃~+150℃@(Tj)
FET Type:
-
Pd - Power Dissipation:
225mW
Drain Current (Idss):
1.5mA@15V
RDS(on):
300Ω
Gate-Source Breakdown Voltage (Vgss):
30V
Gate-Source Cutoff Voltage (VGS(off)):
800mV@10nA
Mfr. Part #:
SMMBFJ177LT1G
Package:
SOT-23
Product Description

Product Overview

The MMBFJ177LT1G, SMMBFJ177LT1G are P-Channel JFET Chopper devices designed for various applications. They are Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. The 'S' prefix denotes suitability for automotive and other applications with unique site and control change requirements, featuring AEC-Q101 qualification and PPAP capability.

Product Attributes

  • Brand: onsemi (Semiconductor Components Industries, LLC)
  • Certifications: AEC-Q101 Qualified (for 'S' prefix variants), RoHS Compliant
  • Material: Pb-Free, Halogen Free/BFR Free
  • Package: SOT-23 (TO-236)

Technical Specifications

Characteristic Symbol Min Max Unit Notes
DrainGate Voltage VDG -25 Vdc
GateSource Voltage VGS 25 Vdc
Total Device Dissipation (FR-5 Board, TA = 25C) PD 225 mW Note 1
Thermal Resistance, JunctiontoAmbient RJA 556 C/W
Junction and Storage Temperature TJ, Tstg -55 +150 C
GateSource Breakdown Voltage (VDS = 0, ID = 1.0 Adc) V(BR)GSS 30 Vdc
Gate Reverse Current (VDS = 0 Vdc, VGS = 20 Vdc) IGSS 1.0 nAdc
Gate Source Cutoff Voltage (VDS = -15 Vdc, ID = -10 nAdc) VGS(off) 0.8 2.5 Vdc
ZeroGateVoltage Drain Current (VGS = 0, VDS = -15 Vdc) IDSS -1.5 -20 mAdc Note 2
Drain Cutoff Current (VDS = -15 Vdc, VGS = 10 Vdc) ID(off) -1.0 nAdc
Drain Source On Resistance (ID = -500 Adc) rDS(on) 300
Input Capacitance (VDS = 0, VGS = 10 Vdc, f = 1.0 MHz) Ciss 11 pF
Reverse Transfer Capacitance (VDS = 0, VGS = 10 Vdc, f = 1.0 MHz) Crss 5.5 pF

2411220046_onsemi-SMMBFJ177LT1G_C604702.pdf

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