N Channel JFET onsemi MMBF4392LT1G Transistor with Pb Free Halogen Free and Automotive Certification
Key Attributes
Model Number:
MMBF4392LT1G
Product Custom Attributes
Ciss-Input Capacitance:
14pF@15V
Operating Temperature:
-55℃~+150℃@(Tj)
Pd - Power Dissipation:
225mW
Drain Current (Idss):
25mA@15V
FET Type:
-
RDS(on):
-
Gate-Source Breakdown Voltage (Vgss):
30V
Gate-Source Cutoff Voltage (VGS(off)):
2V@10nA
Mfr. Part #:
MMBF4392LT1G
Package:
SOT-23
Product Description
Product Overview
The MMBF4391L, MMBF4392L, and MMBF4393L are N-Channel JFET Switching Transistors designed for automotive and other applications requiring unique site and control change requirements. These devices are Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, ensuring environmental responsibility and suitability for a wide range of electronic designs.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Certifications: AECQ101 Qualified, PPAP Capable
- Material: PbFree, Halogen Free/BFR Free
- Compliance: RoHS Compliant
Technical Specifications
| Characteristic | Symbol | MMBF4391L | MMBF4392L | MMBF4393L | Unit | |
| MAXIMUM RATINGS | ||||||
| DrainSource Voltage | VDS | 30 | Vdc | |||
| DrainGate Voltage | VDG | 30 | Vdc | |||
| GateSource Voltage | VGS | 30 | Vdc | |||
| Forward Gate Current | IG(f) | 50 | mAdc | |||
| THERMAL CHARACTERISTICS | ||||||
| Total Device Dissipation FR5 Board (TA = 25C) | PD | 225 | mW | |||
| Derate above 25C | 1.8 | mW/C | ||||
| Thermal Resistance, JunctiontoAmbient | R JA | 556 | C/W | |||
| Junction and Storage Temperature Range | TJ, Tstg | 55 to +150 | C | |||
| OFF CHARACTERISTICS | ||||||
| GateSource Breakdown Voltage (IG = 1.0 mAdc, VDS = 0) | V(BR)GSS | 30 | Vdc | |||
| Gate Reverse Current (VGS = 15 Vdc, VDS = 0, TA = 25C) | IGSS | 1.0 | nAdc | |||
| Gate Reverse Current (VGS = 15 Vdc, VDS = 0, TA = 100C) | IGSS | 0.20 | Adc | |||
| GateSource Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) | VGS(off) | 4.0 | 2.0 | 0.5 | Vdc | |
| OffState Drain Current (VDS = 15 Vdc, VGS = 12 Vdc) | ID(off) | 1.0 | nAdc | |||
| OffState Drain Current (VDS = 15 Vdc, VGS = 12 Vdc, TA = 100C) | ID(off) | 1.0 | Adc | |||
| ON CHARACTERISTICS | ||||||
| ZeroGateVoltage Drain Current (VDS = 15 Vdc, VGS = 0) | IDSS | 50150 | 2575 | 5.030 | mAdc | |
| DrainSource OnVoltage (ID = 12 mAdc, VGS = 0) | VDS(on) | 0.4 | Vdc | |||
| DrainSource OnVoltage (ID = 6.0 mAdc, VGS = 0) | VDS(on) | 0.4 | Vdc | |||
| DrainSource OnVoltage (ID = 3.0 mAdc, VGS = 0) | VDS(on) | 0.4 | Vdc | |||
| Static DrainSource OnResistance (ID = 1.0 mAdc, VGS = 0) | rDS(on) | 30 | 60 | 100 | ||
| SMALLSIGNAL CHARACTERISTICS | ||||||
| Input Capacitance (VDS = 0 Vdc, VGS = 15 Vdc, f = 1.0 MHz) | Ciss | 14 | pF | |||
| Reverse Transfer Capacitance (VDS = 0 Vdc, VGS = 12 Vdc, f = 1.0 MHz) | Crss | 3.5 | pF | |||
2410121940_onsemi-MMBF4392LT1G_C259802.pdf
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