Miniature SOD523 Schottky Diode onsemi RB521S30T1G Offering Low Conduction Loss and High Reliability
Key Attributes
Model Number:
RB521S30T1G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
1A
Reverse Leakage Current (Ir):
30uA@10V
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
500mV@200mA
Current - Rectified:
200mA
Mfr. Part #:
RB521S30T1G
Package:
SOD-523
Product Description
Product Overview
These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Their extremely low forward voltage reduces conduction loss, and the miniature surface mount package is ideal for space-limited, hand-held, and portable applications.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Origin: USA (implied by onsemi)
- Certifications: AEC-Q101 Qualified (for NSV prefix), RoHS Compliant, Pb-Free, Halogen Free/BFR Free
Technical Specifications
| Part Number | Package | Reverse Voltage (VR) | Forward Current (IF) | Peak Forward Surge Current (IFSM) | Reverse Leakage (IR) @ VR=10V | Forward Voltage (VF) @ IF=200mA | Total Device Dissipation (PD) @ TA=25C | Thermal Resistance (RJA) | Junction/Storage Temp (TJ, Tstg) | Tape & Reel Pitch | Reel Quantity |
| RB521S30T1G | SOD-523 | 30 Vdc | 200 mA | 1.0 A | 30.0 A (max) | 0.50 Vdc (max) | 200 mW | 635 C/W | -55 to +125 C | 4 mm | 3,000 |
| NSVRB521S30T1G | SOD-523 | 30 Vdc | 200 mA | 1.0 A | 30.0 A (max) | 0.50 Vdc (max) | 200 mW | 635 C/W | -55 to +125 C | 4 mm | 3,000 |
| RB521S30T5G | SOD-523 | 30 Vdc | 200 mA | 1.0 A | 30.0 A (max) | 0.50 Vdc (max) | 200 mW | 635 C/W | -55 to +125 C | 2 mm | 8,000 |
2410010303_onsemi-RB521S30T1G_C145179.pdf
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