Electronic circuits small signal diode onsemi BAS16HT1G with fast switching and low leakage features

Key Attributes
Model Number: BAS16HT1G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
600mA
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
6ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
85V
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
200mA
Mfr. Part #:
BAS16HT1G
Package:
SOD-323
Product Description

ON Semiconductor BAS16HT1G - Small Signal Diode

The BAS16HT1G is a small signal diode designed for general-purpose applications. It offers reliable performance and is suitable for various electronic circuits requiring fast switching and low leakage characteristics.

Product Attributes

  • Brand: ON Semiconductor (formerly Fairchild Semiconductor)
  • Product Type: Small Signal Diode
  • Package: SOD-323

Technical Specifications

Parameter Conditions Min. Max. Units
Maximum Repetitive Reverse Voltage (VRRM) 85 V
Average Rectified Forward Current (IF(AV)) 200 mA
Non-repetitive Peak Forward Surge Current (IFSM) Pulse Width = 1.0 second 600 mA
Storage Temperature Range (TSTG) -65 +150 C
Operating Junction Temperature (TJ) -55 +150 C
Power Dissipation (PD) 200 mW
Thermal Resistance, Junction to Ambient (RJA) 600 C/W
Breakdown Voltage (VR) IR = 5.0A 85 V
Forward Voltage (VF) IF = 0.1mA 715 mV
Forward Voltage (VF) IF = 10mA 855 mV
Forward Voltage (VF) IF = 50mA 1.0 V
Forward Voltage (VF) IF = 150mA 1.25 V
Reverse Leakage (IR) VR = 75V 1.0 A
Reverse Leakage (IR) VR = 25V, TA = 150C 30 A
Reverse Leakage (IR) VR = 75V, TA = 150C 50 A
Total Capacitance (CT) VR = 0, f = 1.0MHz 2.0 pF
Reverse Recovery Time (trr) IF = IR = 10mA, IRR = 1.0mA, RL = 100 6.0 ns

2410010302_onsemi-BAS16HT1G_C131148.pdf

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