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quality Advanced motion control module onsemi FSB50250 optimized for inverter efficiency and low EMI operation factory
quality Advanced motion control module onsemi FSB50250 optimized for inverter efficiency and low EMI operation factory
quality Advanced motion control module onsemi FSB50250 optimized for inverter efficiency and low EMI operation factory

Advanced motion control module onsemi FSB50250 optimized for inverter efficiency and low EMI operation

Key Attributes
Model Number: FSB50250
Product Custom Attributes
Voltage - Isolation:
1500Vrms
Mfr. Part #:
FSB50250
Product Description

Product Overview

The FSB50250 is an advanced Motion SPM 5 module designed for 3-phase inverter applications. It integrates optimized gate drive for built-in FRFET MOSFETs, minimizing EMI and losses. The module features a high-speed HVIC for gate driving and under-voltage protection, requiring only a single supply voltage. Separate open-source terminals for each phase facilitate diverse control algorithms, making it ideal for AC Induction, BLDC, and PMSM motors in small power AC motor drives.

Product Attributes

  • Brand: Fairchild Semiconductor Corporation
  • Product Series: Motion SPM 5 Series
  • Certifications: UL Certified No. E209204 (UL1557)
  • Compliance: RoHS Compliant

Technical Specifications

ParameterConditionsMinTypMaxUnit
Inverter Part (each MOSFET unless otherwise specified)
Drain-Source Breakdown Voltage (BVDSS)VIN = 0 V, ID = 250 A500--V
Zero Gate Voltage Drain Current (IDSS)VIN = 0 V, VDS = 500 V--250A
Static Drain-Source Turn-On Resistance (RDS(on))VCC = VBS = 15 V, VIN = 5 V, ID = 0.5 A-3.34.0
Drain-Source Diode Forward Voltage (VSD)VCC = VBS = 15V, VIN = 0 V, ID = -0.5 A--1.2V
Switching Times (tON)VPN = 300 V, VCC = VBS = 15 V, ID = 0.5 A, VIN = 0 V 5 V, Inductive Load L = 3 mH-1273-ns
Switching Times (tOFF)VPN = 300 V, VCC = VBS = 15 V, ID = 0.5 A, VIN = 0 V 5 V, Inductive Load L = 3 mH-800-ns
Reverse Recovery Time (trr)VPN = 300 V, VCC = VBS = 15 V, ID = 0.5 A, VIN = 0 V 5 V, Inductive Load L = 3 mH-213-ns
Switching Energy (EON)VPN = 300 V, VCC = VBS = 15 V, ID = 0.5 A, VIN = 0 V 5 V, Inductive Load L = 3 mH-42-J
Switching Energy (EOFF)VPN = 300 V, VCC = VBS = 15 V, ID = 0.5 A, VIN = 0 V 5 V, Inductive Load L = 3 mH-2.8-J
Reverse Bias Safe Operating Area (RBSOA)VPN = 400 V, VCC = VBS = 15 V, ID = IDP, VDS = BVDSS, TJ = 150CFull Square
Control Part (each HVIC unless otherwise specified)
Quiescent VCC Current (IQCC)VCC = 15 V, VIN = 0 V--160A
Quiescent VBS Current (IQBS)VBS = 15 V, VIN = 0 V--100A
Low-Side Under-Voltage Protection Detection Level (UVCCD)-7.48.09.4V
Low-Side Under-Voltage Protection Reset Level (UVCCR)-8.08.99.8V
High-Side Under-Voltage Protection Detection Level (UVBSD)-7.48.09.4V
High-Side Under-Voltage Protection Reset Level (UVBSR)-8.08.99.8V
ON Threshold Voltage (VIH)Logic HIGH Level3.0--V
OFF Threshold Voltage (VIL)Logic LOW Level--0.8V
Input Bias Current (IIH)VIN = 5 V-1020A
Input Bias Current (IIL)VIN = 0 V--2A
Absolute Maximum Ratings
Drain-Source Voltage of Each MOSFET (VDSS)---500V
Continuous Drain Current, Each MOSFET (ID)TC = 25C--1.0A
Continuous Drain Current, Each MOSFET (ID)TC = 80C--0.7A
Peak Drain Current, Each MOSFET (IDP)TC = 25C, PW < 100 s--2.0A
Maximum Power Dissipation, For Each MOSFET (PD)TC = 25C--4.5W
Control Supply Voltage (VCC)Applied Between VCC and COM--20V
High-side Bias Voltage (VBS)Applied Between VB and VS--20V
Input Signal Voltage (VIN)Applied Between IN and COM-0.3-VCC + 0.3V
Junction to Case Thermal Resistance (RJC)Each MOSFET under Inverter Operating Condition-9.3-C/W
Operating Junction Temperature (TJ)--20-150C
Storage Temperature (TSTG)--50-150C
Isolation Voltage (VISO)60 Hz, Sinusoidal, 1 Minute, Connect Pins to Heat Sink Plate-1500-Vrms
Recommended Operating Conditions
Supply Voltage (VPN)Applied Between P and N-300400V
Control Supply Voltage (VCC)Applied Between VCC and COM13.515.016.5V
High-Side Bias Voltage (VBS)Applied Between VB and VS13.515.016.5V
Blanking Time (td)VCC = VBS = 13.5 ~ 16.5 V, TJ 150C1.0--s
PWM Switching Frequency (fPWM)TJ 150C-15-kHz
Case Temperature (TC)TJ 150C-20-125C

2411272116_onsemi-FSB50250_C3615438.pdf

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