Glass passivated junction onsemi ES1D fast recovery rectifier designed for surface mount installation

Key Attributes
Model Number: ES1D
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Leakage Current (Ir):
5uA@200V
Reverse Recovery Time (trr):
15ns
Operating Junction Temperature Range:
-50℃~+150℃@(Tj)
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
200V
Pd - Power Dissipation:
1.47W
Voltage - Forward(Vf@If):
920mV@1A
Current - Rectified:
1A
Mfr. Part #:
ES1D
Package:
SMA(DO-214AC)
Product Description

Product Overview

The ES1A - ES1D series are fast recovery rectifiers designed for surface mount applications. They feature a glass-passivated junction, a low-profile package, and easy pick-and-place capability with built-in strain relief. These rectifiers offer superfast recovery times for high efficiency in various applications.

Product Attributes

  • Brand: ON Semiconductor (formerly Fairchild Semiconductor)
  • Certifications: Conforms to JEDEC DO214 variation AC (except where noted)
  • Material: Glass passivated junction

Technical Specifications

ParameterDeviceUnitsES1AES1BES1CES1D
Maximum Repetitive Reverse Voltage (VRRM)V50100150200
Average Rectified Forward Current (IF(AV)) @ TA=120CA1.0
Non-repetitive Peak Forward Surge Current (IFSM) 8.3 ms Single Half-Sine-WaveA30
Storage Temperature Range (Tstg)C -50 to +150
Operating Junction Temperature (TJ)C -50 to +150
Power Dissipation (PD)W1.47
Thermal Resistance, Junction to Ambient (RJA)*C/W85
Thermal Resistance, Junction to Lead (RJL)*C/W35
Forward Voltage (VF) @ 1.0 AV0.920.920.920.92
Reverse Recovery Time (trr) IF = 0.5 A, IR = 1.0 A, IRR = 0.25 Ans15
Reverse Current (IR) @ rated VR TA = 25CA5.0
Reverse Current (IR) @ rated VR TA = 100CA100
Total Capacitance (CT) VR = 4.0 V, f = 1.0 MHzpF7.0

*Device mounted on FR-4 PCB 0.013 mm.


2410121854_onsemi-ES1D_C84602.pdf

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