600 volt 50 amp three phase igbt inverter module onsemi FNB35060T with low loss igbts and fault reporting features

Key Attributes
Model Number: FNB35060T
Product Custom Attributes
Mfr. Part #:
FNB35060T
Package:
SPM-27-RA
Product Description

Product Overview

The FNB35060T is an advanced Motion SPM 3 module designed for AC Induction, BLDC, and PMSM motors. It offers a fully-featured, high-performance inverter output stage with optimized gate drive for reduced EMI and losses. Integrated protection features include under-voltage lockouts, over-current shutdown, thermal monitoring, and fault reporting. The module utilizes a single supply voltage and translates logic-level inputs to high-voltage drive signals for internal IGBTs. Separate negative IGBT terminals facilitate diverse control algorithms.

Product Attributes

  • Brand: ON Semiconductor
  • Origin: United States and/or other countries (implied by ON Semiconductor trademarks)
  • Trademarks: ON Semiconductor logo, Motion SPM
  • Certifications: Not specified in the provided text
  • Material: AlN DBC Substrate (for thermal resistance)
  • Color: Not specified in the provided text

Technical Specifications

DevicePackageQuantityFeaturesApplicationsAbsolute Maximum Ratings (Inverter Part)Absolute Maximum Ratings (Control Part)Absolute Maximum Ratings (Bootstrap Diode Part)
FNB35060TSPM27-RA10600 V - 50 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection; Low-Loss, Short-Circuit Rated IGBTs; Very Low Thermal Resistance using AlN DBC Substrate; Built-In Bootstrap Diodes and Dedicated Vs Pins Simplify PCB Layout; Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing; Single-Grounded Power Supply; LVIC Temperature-Sensing Built-In for Temperature Monitoring; Isolation Rating: 2500 Vrms / 1 min.Motion Control - Home Appliance / Industrial MotorVPN: 450 V (Surge: 500 V); VCES: 600 V; IC: 50 A (TC=25C); ICP: 100 A (Peak, Pulse Width < 1 ms); PC: 367 W (TC=25C per One Chip); TJ: -40 ~ 150 CVDD: 20 V; VBS: 20 V; VIN: -0.3 ~ VDD+0.3 V; VFO: -0.3 ~ VDD+0.3 V; IFO: 2 mA; VSC: -0.3 ~ VDD+0.3 VVRRM: 600 V; IF: (TC=25C)

2411261427_onsemi-FNB35060T_C606128.pdf

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