High speed dual switching diode onsemi BAV70LT1G designed for automotive and industrial applications
Key Attributes
Model Number:
BAV70LT1G
Product Custom Attributes
Reverse Leakage Current (Ir):
1uA@100V
Reverse Recovery Time (trr):
6ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
100V
Diode Configuration:
1 Pair Common Cathode
Pd - Power Dissipation:
225mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
200mA
Mfr. Part #:
BAV70LT1G
Package:
SOT-23
Product Description
Product Overview
The BAV70L and SBAV70L are dual switching diodes designed for high-speed switching applications. They are AEC-Q101 qualified and PPAP capable, making them suitable for automotive and other demanding applications. These devices are Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
Product Attributes
- Brand: onsemi
- Certifications: AEC-Q101 Qualified, PPAP Capable, Pb-Free, Halogen Free/BFR Free, RoHS Compliant
- Origin: USA (implied by onsemi.com and North American support details)
- Material: Not specified
- Color: Not specified
Technical Specifications
| Model | Description | Max Reverse Voltage (VR) | Max Forward Current (IF) | Max Peak Forward Surge Current (IFM(surge)) | Max Repetitive Peak Forward Current (IFRM) | Max Non-Repetitive Peak Forward Current (IFSM) | Max Junction and Storage Temperature (TJ, Tstg) | Max Diode Capacitance (CD) | Max Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|
| BAV70L, SBAV70L (Each Diode) | Dual Switching Diode, Common Cathode | 100 V | 200 mA | 500 mA | 1.5 A | 31 A (t=1 s) to 1.0 A (t=100 ms) | 55 to +150 C | 1.5 pF | 6.0 ns |
2410010303_onsemi-BAV70LT1G_C82479.pdf
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