Electric vehicle inverter module onsemi NFVA35065L32 with AEC AQG324 and RoHS compliant certifications
Product Overview
The NFVA35065L32 is an advanced Automotive SPM module designed for hybrid and electric vehicle applications. It provides a high-performance inverter output stage with integrated IGBTs, optimized gate drive for reduced EMI and losses, and multiple on-module protection features including under-voltage lockout, over-current shutdown, and thermal monitoring. The module utilizes a single supply voltage for its high-speed HVIC, translating logic-level gate inputs to high-voltage drive signals for the internal IGBTs. Separate negative IGBT terminals are available for flexible control algorithm implementation.
Product Attributes
- Brand: onsemi
- Series: ASPM 27 Series
- Package: 27 Pin DIP Package (ASPM27-CCA)
- Certifications: AEC & AQG324 Qualified, PPAP Capable, UI1557 Certified (File No. E209204), UL94V-0 Compliant, PbFree and RoHS Compliant
- Material: AlN DBC Substrate
- Application: Automotive High Voltage Auxiliary Motors (Climate eCompressors, Oil/Water Pumps, Super/Turbo Chargers, Variety Fans)
Technical Specifications
| Parameter | Conditions | Rating | Unit |
| INVERTER PART | |||
| Supply Voltage (VPN) | Applied between PNU, NV, NW | 500 | V |
| Supply Voltage (Surge) (VPN(Surge)) | Applied between PNU, NV, NW | 550 | V |
| CollectorEmitter Voltage (VCES) | 650 | V | |
| Collector Current (IC) | TC = 100C, VDD 15 V, TJ 175C | 50 | A |
| Collector Current (Peak) (ICP) | TC = 25C, TJ 175C, Under 1 ms Pulse Width | 100 | A |
| Collector Dissipation (PC) | TC = 25C per One Chip | 428 | W |
| Operating Junction Temperature (TJ) | IGBT and Diode | 40175 | C |
| Operating Junction Temperature (TJ) | Driver IC | 40150 | C |
| Short Circuit Withstand Time (tSC) | VDD = VBS 16.5 V, VPN 400 V, TJ = 150C Nonrepetitive | 3 | s |
| Isolation Voltage (VISO) | 60 Hz, Sinusoidal, AC 1 minute, Connection Pins to Heat Sink Plate | 2500 | Vrms |
| Junction to Case Thermal Resistance (Rth(j-c)Q) | Inverter IGBT part (per 1/6 module) | 0.35 | C/W |
| Junction to Case Thermal Resistance (Rth(j-c)F) | Inverter FWD part (per 1/6 module) | 0.90 | C/W |
| Package Stray Inductance (L) | P to NU, NV, NW | 24 | nH |
| CONTROL PART | |||
| Control Supply Voltage (VDD) | Applied between VDD(H), VDD(L)COM | 20 | V |
| HighSide Control Bias Voltage (VBS) | Applied between VB(U)VS(U), VB(V)VS(V), VB(W)VS(W) | 20 | V |
| Input Signal Voltage (VIN) | Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL)COM | 0.3VDD+0.3 | V |
| Fault Output Supply Voltage (VFO) | Applied between VFOCOM | 0.3VDD+0.3 | V |
| Fault Output Current (IFO) | Sink Current at VFO pin | 2 | mA |
| Current Sensing Input Voltage (VSC) | Applied between CSCCOM | 0.3VDD+0.3 | V |
| ELECTRICAL CHARACTERISTICS - INVERTER PART | |||
| Collector Emitter Saturation Voltage (VCE(SAT)) | VDD = VBS = 15 V, VIN = 5 V, IC = 50 A, TJ = 25C | 1.75 - 2.25 | V |
| Collector Emitter Saturation Voltage (VCE(SAT)) | VDD = VBS = 15 V, VIN = 5 V, IC = 50 A, TJ = 175C | 2.15 - 2.75 | V |
| FWD Forward Voltage (VF) | VIN = 0 V, IF = 50 A, TJ = 25C | 1.90 - 2.50 | V |
| FWD Forward Voltage (VF) | VIN = 0 V, IF = 50 A, TJ = 175C | 1.85 - 2.45 | V |
| High Side Switching Times (tON) | VPN = 300 V, VDD = 15 V, IC = 50 A, TJ = 25C, Inductive Load | 0.80 - 1.80 | s |
| High Side Switching Times (tOFF) | VPN = 300 V, VDD = 15 V, IC = 50 A, TJ = 25C, Inductive Load | 1.25 - 1.75 | s |
| Low Side Switching Times (tON) | VPN = 300 V, VDD = 15 V, IC = 50 A, TJ = 25C, Inductive Load | 0.65 - 1.65 | s |
| Low Side Switching Times (tOFF) | VPN = 300 V, VDD = 15 V, IC = 50 A, TJ = 25C, Inductive Load | 1.30 - 1.80 | s |
| CollectorEmitter Leakage Current (ICES) | TJ = 25C, VCE = VCES | 3 | mA |
| ELECTRICAL CHARACTERISTICS - CONTROL PART | |||
| Quiescent VDD Supply Current (IQDDH) | VDD(H) = 15 V, IN(UH,VH.WH) = 0 V | 0.40 | mA |
| Quiescent VDD Supply Current (IQDDL) | VDD(L) = 15 V, IN(UL,VL,WL) = 0 V | 4.80 | mA |
| Operating VDD Supply Current (IPDDH) | VDD(H) = 15 V, fPWM = 20 kHz, duty = 50%, applied to one PWM signal input for HighSide | 0.48 | mA |
2411271942_onsemi-NFVA35065L32_C604142.pdf
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