Electric vehicle inverter module onsemi NFVA35065L32 with AEC AQG324 and RoHS compliant certifications

Key Attributes
Model Number: NFVA35065L32
Product Custom Attributes
Voltage - Isolation:
2500Vrms
Mfr. Part #:
NFVA35065L32
Package:
DIP-27
Product Description

Product Overview

The NFVA35065L32 is an advanced Automotive SPM module designed for hybrid and electric vehicle applications. It provides a high-performance inverter output stage with integrated IGBTs, optimized gate drive for reduced EMI and losses, and multiple on-module protection features including under-voltage lockout, over-current shutdown, and thermal monitoring. The module utilizes a single supply voltage for its high-speed HVIC, translating logic-level gate inputs to high-voltage drive signals for the internal IGBTs. Separate negative IGBT terminals are available for flexible control algorithm implementation.

Product Attributes

  • Brand: onsemi
  • Series: ASPM 27 Series
  • Package: 27 Pin DIP Package (ASPM27-CCA)
  • Certifications: AEC & AQG324 Qualified, PPAP Capable, UI1557 Certified (File No. E209204), UL94V-0 Compliant, PbFree and RoHS Compliant
  • Material: AlN DBC Substrate
  • Application: Automotive High Voltage Auxiliary Motors (Climate eCompressors, Oil/Water Pumps, Super/Turbo Chargers, Variety Fans)

Technical Specifications

ParameterConditionsRatingUnit
INVERTER PART
Supply Voltage (VPN)Applied between PNU, NV, NW500V
Supply Voltage (Surge) (VPN(Surge))Applied between PNU, NV, NW550V
CollectorEmitter Voltage (VCES)650V
Collector Current (IC)TC = 100C, VDD 15 V, TJ 175C50A
Collector Current (Peak) (ICP)TC = 25C, TJ 175C, Under 1 ms Pulse Width100A
Collector Dissipation (PC)TC = 25C per One Chip428W
Operating Junction Temperature (TJ)IGBT and Diode40175C
Operating Junction Temperature (TJ)Driver IC40150C
Short Circuit Withstand Time (tSC)VDD = VBS 16.5 V, VPN 400 V, TJ = 150C Nonrepetitive3s
Isolation Voltage (VISO)60 Hz, Sinusoidal, AC 1 minute, Connection Pins to Heat Sink Plate2500Vrms
Junction to Case Thermal Resistance (Rth(j-c)Q)Inverter IGBT part (per 1/6 module)0.35C/W
Junction to Case Thermal Resistance (Rth(j-c)F)Inverter FWD part (per 1/6 module)0.90C/W
Package Stray Inductance (L)P to NU, NV, NW24nH
CONTROL PART
Control Supply Voltage (VDD)Applied between VDD(H), VDD(L)COM20V
HighSide Control Bias Voltage (VBS)Applied between VB(U)VS(U), VB(V)VS(V), VB(W)VS(W)20V
Input Signal Voltage (VIN)Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL)COM0.3VDD+0.3V
Fault Output Supply Voltage (VFO)Applied between VFOCOM0.3VDD+0.3V
Fault Output Current (IFO)Sink Current at VFO pin2mA
Current Sensing Input Voltage (VSC)Applied between CSCCOM0.3VDD+0.3V
ELECTRICAL CHARACTERISTICS - INVERTER PART
Collector Emitter Saturation Voltage (VCE(SAT))VDD = VBS = 15 V, VIN = 5 V, IC = 50 A, TJ = 25C1.75 - 2.25V
Collector Emitter Saturation Voltage (VCE(SAT))VDD = VBS = 15 V, VIN = 5 V, IC = 50 A, TJ = 175C2.15 - 2.75V
FWD Forward Voltage (VF)VIN = 0 V, IF = 50 A, TJ = 25C1.90 - 2.50V
FWD Forward Voltage (VF)VIN = 0 V, IF = 50 A, TJ = 175C1.85 - 2.45V
High Side Switching Times (tON)VPN = 300 V, VDD = 15 V, IC = 50 A, TJ = 25C, Inductive Load0.80 - 1.80s
High Side Switching Times (tOFF)VPN = 300 V, VDD = 15 V, IC = 50 A, TJ = 25C, Inductive Load1.25 - 1.75s
Low Side Switching Times (tON)VPN = 300 V, VDD = 15 V, IC = 50 A, TJ = 25C, Inductive Load0.65 - 1.65s
Low Side Switching Times (tOFF)VPN = 300 V, VDD = 15 V, IC = 50 A, TJ = 25C, Inductive Load1.30 - 1.80s
CollectorEmitter Leakage Current (ICES)TJ = 25C, VCE = VCES3mA
ELECTRICAL CHARACTERISTICS - CONTROL PART
Quiescent VDD Supply Current (IQDDH)VDD(H) = 15 V, IN(UH,VH.WH) = 0 V0.40mA
Quiescent VDD Supply Current (IQDDL)VDD(L) = 15 V, IN(UL,VL,WL) = 0 V4.80mA
Operating VDD Supply Current (IPDDH)VDD(H) = 15 V, fPWM = 20 kHz, duty = 50%, applied to one PWM signal input for HighSide0.48mA

2411271942_onsemi-NFVA35065L32_C604142.pdf

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