450V N Channel MOSFET PIP PTA09N45 Featuring Low Gate Charge and Fast Recovery Diode for Lighting
Key Attributes
Model Number:
PTA09N45
Product Custom Attributes
Drain To Source Voltage:
450V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
480mΩ@10V,4.5A
Gate Threshold Voltage (Vgs(th)):
-
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
11pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
92pF
Input Capacitance(Ciss):
1.12nF
Pd - Power Dissipation:
40W
Gate Charge(Qg):
-
Mfr. Part #:
PTA09N45
Package:
TO-220F
Product Description
Product Overview
The PTA09N45 is a 450V N-Channel MOSFET featuring proprietary new planar technology. It offers a low gate charge for minimized switching loss and a fast recovery body diode. This MOSFET is suitable for applications such as ballasts, lighting, DC-AC inverters, and other general applications.
Product Attributes
- Brand: PIP
- Origin: Perfect Intelligent Power Semiconductor Co., Ltd.
Technical Specifications
| Part Number | Package | VDSS (V) | RDS(ON),typ. () | ID (A) | VGS(TH) (V) | Ciss (pF) | trr (ns) |
| PTA09N45 | TO-220F | 450 | 0.48 | 9 | 2.0 - 4.0 | 1120 | 300 |
2410121448_PIP-PTA09N45_C575807.pdf
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