High speed switching diode onsemi BAT54XV2T5G with repetitive peak forward current of 300 milliamps
Key Attributes
Model Number:
BAT54XV2T5G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
600mA
Reverse Leakage Current (Ir):
2uA@25V
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
800mV@100mA
Current - Rectified:
200mA
Mfr. Part #:
BAT54XV2T5G
Package:
SOD-523
Product Description
Product Overview
The BAT54XV2 Schottky barrier diodes are engineered for high-speed switching, circuit protection, and voltage clamping. Their extremely low forward voltage minimizes conduction losses, making them ideal for space-constrained applications such as handheld and portable devices. These diodes are Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
Product Attributes
- Brand: onsemi (Semiconductor Components Industries, LLC)
- Certifications: AECQ101 Qualified (for S Prefix), RoHS Compliant
- Material: Silicon Hot-Carrier Detector and Switching Diodes
- Package: SOD523
Technical Specifications
| Characteristic | Symbol | Value | Unit | Notes |
| Reverse Voltage | VR | 30 | V | |
| Total Device Dissipation (FR-5 Board, TA = 25C) | PD | 200 | mW | Derate above 25C: 1.57 mW/C |
| Forward Current (DC) | IF | 200 | Max mA | |
| Non-Repetitive Peak Forward Current (tp < 10 msec) | IFSM | 600 | mA | |
| Repetitive Peak Forward Current (Pulse Wave = 1 sec, Duty Cycle = 66%) | IFRM | 300 | mA | |
| Thermal Resistance, Junction-to-Ambient | RJA | 635 | C/W | |
| Junction and Storage Temperature | TJ, Tstg | -55 to 125 | C | |
| Reverse Breakdown Voltage (IR = 10 A) | V(BR)R | 30 | V | |
| Total Capacitance (VR = 1.0 V, f = 1.0 MHz) | CT | 7.6 | pF | Typ |
| Reverse Leakage (VR = 25 V) | IR | 0.3 | A | Typ |
| Reverse Leakage (VR = 25 V) | IR | 2.0 | A | Max |
| Forward Voltage (IF = 0.1 mA) | VF | 0.22 | V | Typ |
| Forward Voltage (IF = 1.0 mA) | VF | 0.28 | V | Typ |
| Forward Voltage (IF = 10 mA) | VF | 0.35 | V | Typ |
| Forward Voltage (IF = 30 mA) | VF | 0.39 | V | Typ |
| Forward Voltage (IF = 100 mA) | VF | 0.46 | V | Typ |
| Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA) | trr | 5.0 | ns | Typ |
2410010303_onsemi-BAT54XV2T5G_C146759.pdf
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