Schottky Barrier Diode onsemi BAS40LT1G for High Speed Switching and Circuit Protection Applications
Key Attributes
Model Number:
BAS40LT1G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
600mA
Reverse Leakage Current (Ir):
1uA@25V
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
1V@40mA
Current - Rectified:
120mA
Mfr. Part #:
BAS40LT1G
Package:
SOT-23
Product Description
Product Overview
The BAS40L and SBAS40L are Schottky barrier diodes designed for high-speed switching, circuit protection, and voltage clamping applications. Their extremely low forward voltage minimizes conduction loss, and the miniature surface mount package is ideal for space-constrained, hand-held, and portable devices.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Certifications: AECQ101 Qualified (S Prefix), PbFree, Halogen Free/BFR Free, RoHS Compliant
- Application: Automotive and other applications requiring unique site and control change requirements
Technical Specifications
| Characteristic | Symbol | Value | Unit | Condition |
|---|---|---|---|---|
| Reverse Voltage | VR | 40 | V | |
| Forward Power Dissipation | PF | 225 | mW | @ TA = 25C |
| Derate above 25C | 1.8 | mW/C | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | C | |
| Forward Continuous Current | IF | 120 | mA | |
| Forward Surge Current (t = 1 s) | IFSM | 200 | mA | |
| Forward Surge Current (t = 10 ms) | IFSM | 600 | mA | |
| Thermal Resistance Junction-to-Ambient (Note 1) | R JA | 508 | C/W | FR4 @ minimum pad |
| Thermal Resistance Junction-to-Ambient (Note 2) | R JA | 311 | C/W | FR4 @ 1.0 x 1.0 in pad |
| Reverse Breakdown Voltage | V(BR)R | 40 | V | IR = 10 A |
| Total Capacitance | CT | 5.0 | pF | VR = 1.0 V, f = 1.0 MHz |
| Reverse Leakage | IR | 1.0 | Adc | VR = 25 V |
| Forward Voltage | VF | 380 | mVdc | IF = 1.0 mAdc |
| Forward Voltage | VF | 500 | mVdc | IF = 10 mAdc |
| Forward Voltage | VF | 1.0 | Vdc | IF = 40 mAdc |
2410010333_onsemi-BAS40LT1G_C232531.pdf
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