Power switching diode onsemi RHRG30120 with 85 nanosecond recovery time and 30 amp forward current
Key Attributes
Model Number:
RHRG30120
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
300A
Reverse Leakage Current (Ir):
250uA@1.2kV
Reverse Recovery Time (trr):
85ns
Operating Junction Temperature Range:
-65℃~+175℃@(Tj)
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
1.2kV
Pd - Power Dissipation:
125W
Voltage - Forward(Vf@If):
3.2V@30A
Current - Rectified:
30A
Mfr. Part #:
RHRG30120
Package:
TO-247-2
Product Description
Product Overview
The RHRG30120 is a hyperfast diode featuring soft recovery characteristics, offering half the recovery time of ultrafast diodes. Its silicon nitride passivated ion-implanted epitaxial planar construction makes it suitable for freewheeling/clamping diodes and various switching power supplies and power switching applications. The low stored charge and hyperfast soft recovery minimize ringing and electrical noise, reducing power loss in switching transistors.
Product Attributes
- Brand: ON Semiconductor (formerly Fairchild Semiconductor)
- Certifications: RoHS Compliant
Technical Specifications
| Part Number | Description | Features | Applications | Package | Reverse Voltage (VRRM) | Forward Current (IF(AV)) | Recovery Time (trr) | Forward Voltage (VF) |
| RHRG30120 | 30 A, 1200 V, Hyperfast Diode | Hyperfast Recovery, Max Forward Voltage, 1200 V Reverse Voltage, High Reliability, Avalanche Energy Rated | Switching Power Supplies, Power Switching Circuits, General Purpose | TO-247-2L | 1200 V | 30 A (@ TC = 120C) | 85 ns (@ IF = 30 A) | 3.2 V (@ TC = 25C) |
2410121755_onsemi-RHRG30120_C11753.pdf
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