Load Switch MOSFET PJSEMI PJM3400JNSC Featuring 5A Continuous Drain Current and Low RDS on Resistance
Key Attributes
Model Number:
PJM3400JNSC
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15.4pF
Number:
1 N-channel
Output Capacitance(Coss):
55.5pF
Input Capacitance(Ciss):
622pF
Pd - Power Dissipation:
1.1W
Gate Charge(Qg):
7nC@15V
Mfr. Part #:
PJM3400JNSC
Package:
SOT-23-3
Product Description
Product Overview
The PJM3400JNSC is an N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is RoHS and Reach Compliant, Halogen and Antimony Free, and has a Moisture Sensitivity Level 3. This MOSFET is designed for load switch and PWM applications, offering a VDS of 30V and a continuous ID of 5A, with low RDS(on) at various VGS levels.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Drain Current-Continuous | ID | 5 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 20 | A | ||
| Maximum Power Dissipation | PD | 1.1 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Resistance,Junction-to-Case | RθJC | Note2 | 114 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±12V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250μA | 0.7 | 1 | 1.4 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=10V,ID=5A | -- | 26 | 35 | mΩ |
| Note3,VGS=4.5V,ID=4A | -- | 28 | 38 | mΩ | ||
| Note3,VGS=2.5V,ID=2A | -- | 34 | 45 | mΩ | ||
| Forward Transconductance | gFS | Note3,VDS=5V,ID=1A | -- | 5.8 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | -- | 622 | -- | pF |
| Output Capacitance | Coss | -- | 55.5 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 15.4 | -- | pF | |
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | -- | 23 | -- | Ω |
| Total Gate Charge | Qg | VDS=15V,ID=3A, VGS=0~4.5V | -- | 7 | -- | nC |
| Gate-Source Charge | Qgs | -- | 1.7 | -- | nC | |
| Gate-Drain Charge | Qgd | -- | 1.6 | -- | nC | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=15V,ID=3A, VGS=4.5V,RGEN=3Ω | -- | 4 | -- | nS |
| Turn-on Rise Time | tr | -- | 17 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 95 | -- | nS | |
| Turn-off Fall Time | tf | -- | 37 | -- | nS | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3,VGS=0V,IS=5A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 5 | A |
2409302003_PJSEMI-PJM3400JNSC_C41348046.pdf
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