Low Gate Charge Enhancement Mode MOSFET ORIENTAL SEMI OSG80R300FF N Channel Power Device for Systems
Key Attributes
Model Number:
OSG80R300FF
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
15A
RDS(on):
300mΩ@10V,7.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.9V
Reverse Transfer Capacitance (Crss@Vds):
2.1pF
Number:
1 N-channel
Pd - Power Dissipation:
34W
Input Capacitance(Ciss):
1.552nF
Gate Charge(Qg):
23.3nC@10V
Mfr. Part #:
OSG80R300FF
Package:
TO-220F
Product Description
Product Overview
The OSG80R300FF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS Generic series. Leveraging charge balance technology, this MOSFET offers outstanding low on-resistance and reduced gate charge, minimizing conduction and switching losses. It provides superior switching performance and robust avalanche capability, making it ideal for high power density applications requiring the highest efficiency standards. Key applications include PC power supplies, LED lighting, telecom power, server power, EV chargers, and solar/UPS systems.
Product Attributes
- Brand: Oriental Semiconductor
- Product Line: GreenMOS
- Technology: Charge Balance Technology
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Compliance: Pb Free, RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Key Performance Parameters | ||||
| Drain-source voltage (min @ Tj(max)) | VDS | 850 | V | @ Tj(max) |
| Pulsed drain current | ID, pulse | 45 | A | @ TC=25 C |
| Drain-source on-state resistance (max) | RDS(ON) | 300 | m | @ VGS=10V |
| Total gate charge | Qg | 23.3 | nC | |
| Absolute Maximum Ratings | ||||
| Drain-source voltage | VDS | 800 | V | @ Tj=25 C |
| Gate-source voltage | VGS | 30 | V | @ Tj=25 C |
| Continuous drain current | ID | 15 | A | TC=25 C |
| Continuous drain current | ID | 9.5 | A | TC=100 C |
| Pulsed drain current | ID, pulse | 45 | A | TC=25 C |
| Continuous diode forward current | IS | 15 | A | TC=25 C |
| Diode pulsed current | IS, pulse | 45 | A | TC=25 C |
| Power dissipation | PD | 34 | W | TC=25 C |
| Single pulsed avalanche energy | EAS | 410 | mJ | |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0480 V |
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0480 V, ISDID |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | C | |
| Thermal Characteristics | ||||
| Thermal resistance, junction-case | RJC | 3.68 | C/W | |
| Thermal resistance, junction-ambient | RJA | 62.5 | C/W | |
| Electrical Characteristics | ||||
| Drain-source breakdown voltage | BVDSS | 800 | V | VGS=0 V, ID=250 A |
| Drain-source breakdown voltage | BVDSS | 850 | V | VGS=0 V, ID=250 A, Tj=150 C |
| Gate threshold voltage | VGS(th) | 2.9 - 3.9 | V | VDS=VGS, ID=250 A |
| Drain-source on- state resistance | RDS(ON) | 0.24 - 0.3 | VGS=10 V, ID=7.5 A | |
| Drain-source on- state resistance | RDS(ON) | 0.64 | VGS=10 V, ID=7.5 A, Tj=150 C | |
| Gate-source leakage current | IGSS | 100 | nA | VGS=30 V |
| Drain-source leakage current | IDSS | 5 | A | VDS=800 V, VGS=0 V |
| Gate resistance | RG | 18.2 | =1 MHz, Open drain | |
| Dynamic Characteristics | ||||
| Input capacitance | Ciss | 1552 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Output capacitance | Coss | 80.1 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Reverse transfer capacitance | Crss | 2.1 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Turn-on delay time | td(on) | 33.6 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=7.5 A |
| Rise time | tr | 20.3 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=7.5 A |
| Turn-off delay time | td(off) | 57.9 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=7.5 A |
| Fall time | tf | 4.5 | ns | VGS=10 V, VDS=400 V, RG=2 , ID=7.5 A |
| Gate Charge Characteristics | ||||
| Total gate charge | Qg | 22.7 | nC | VGS=10 V, VDS=400 V, ID=7.5 A |
| Gate-source charge | Qgs | 8.6 | nC | VGS=10 V, VDS=400 V, ID=7.5 A |
| Gate-drain charge | Qgd | 2.3 | nC | VGS=10 V, VDS=400 V, ID=7.5 A |
| Gate plateau voltage | Vplateau | 5.5 | V | VGS=10 V, VDS=400 V, ID=7.5 A |
| Body Diode Characteristics | ||||
| Diode forward voltage | VSD | 1.3 | V | IS=15 A, VGS=0 V |
| Reverse recovery time | trr | 313.7 | ns | VR=400 V, IS=7.5 A, di/dt=100 A/s |
| Reverse recovery charge | Qrr | 4.2 | C | VR=400 V, IS=7.5 A, di/dt=100 A/s |
| Peak reverse recovery current | Irrm | 25.2 | A | VR=400 V, IS=7.5 A, di/dt=100 A/s |
| Package Information (TO220F-C) | ||||
| Dimension E | E | 9.96 - 10.36 | mm | |
| Dimension A | A | 4.50 - 4.90 | mm | |
| Dimension A1 | A1 | 2.34 - 2.74 | mm | |
| Dimension A4 | A4 | 2.56 - 2.96 | mm | |
| Dimension c | c | 0.40 - 0.65 | mm | |
| Dimension D | D | 15.57 - 16.17 | mm | |
| Dimension L | L | 12.68 - 13.28 | mm | |
| Dimension L1 | L1 | 2.88 - 3.18 | mm | |
| Dimension P | P | 3.03 - 3.38 | mm | |
| Dimension P3 | P3 | 3.15 - 3.65 | mm | |
| Dimension F3 | F3 | 3.15 - 3.45 | mm | |
| Dimension G3 | G3 | 1.25 - 1.55 | mm | |
| Dimension b1 | b1 | 1.18 - 1.43 | mm | |
| Dimension b2 | b2 | 0.70 - 0.95 | mm | |
| Package Information (TO220F-J) | ||||
| Dimension A | A | 4.40 - 4.60 | mm | |
| Dimension A1 | A1 | 1.27 - 1.33 | mm | |
| Dimension A2 | A2 | 2.30 - 2.50 | mm | |
| Dimension b | b | 0.70 - 0.90 | mm | |
| Dimension b1 | b1 | 1.27 - 1.40 | mm | |
| Dimension c | c | 0.45 - 0.60 | mm | |
| Dimension D | D | 15.30 - 16.10 | mm | |
| Dimension D1 | D1 | 9.10 - 9.30 | mm | |
| Dimension D2 | D2 | 13.10 - 13.70 | mm | |
| Dimension E | E | 9.70 - 10.20 | mm | |
| Dimension E1 | E1 | 7.80 - 8.20 | mm | |
| Dimension H1 | H1 | 6.30 - 6.70 | mm | |
| Dimension L | L | 12.78 - 13.38 | mm | |
| Dimension L2 | L2 | 4.60REF | mm | |
| Dimension P | P | 3.55 - 3.65 | mm | |
| Dimension Q | Q | 2.73 - 2.87 | mm | |
| Dimension 1 | 1 | 1 - 5 | ||
| Ordering Information | ||||
| Product Name | OSG80R300FF | |||
| Package Type | TO220F-C | Units/Tube: 50, Tubes/Inner Box: 20, Units/Inner Box: 1000, Inner Boxes/Carton Box: 6, Units/Carton Box: 6000 | ||
| Package Type | TO220F-J | Units/Tube: 50, Tubes/Inner Box: 20, Units/Inner Box: 1000, Inner Boxes/Carton Box: 5, Units/Carton Box: 5000 | ||
2411220036_ORIENTAL-SEMI-OSG80R300FF_C5175405.pdf
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