Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFG10S10PF with Low RDS ON and Fast Switching
Key Attributes
Model Number:
SFG10S10PF
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
7.1pF@50V
Number:
-
Input Capacitance(Ciss):
1.998nF
Pd - Power Dissipation:
107W
Gate Charge(Qg):
28.9nC@10V
Mfr. Part #:
SFG10S10PF
Package:
TO-220
Product Description
Product Overview
The SFG10S10PF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor. Built on Oriental Semiconductors unique device design, it offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically designed for synchronous rectification power systems requiring low driving voltage. Key applications include PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and switched-mode power supplies.
Product Attributes
- Brand: Oriental Semiconductor
- Product Line: SFGMOS
- Package Type: TO220-J
- Certifications: Pb Free, RoHS, Halogen Free
- Origin: Oriental Semiconductor
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 100 | V | VGS=0 V, ID=250 A |
| Gate threshold voltage | VGS(th) | 1.5 - 2.5 | V | VDS=VGS, ID=250 A |
| Drain-source on-state resistance | RDS(ON) | 9 - 10 | m | VGS=10 V, ID=30 A |
| Drain-source on-state resistance | RDS(ON) | 12 - 14 | m | VGS=4.5 V, ID=12 A |
| Gate-source leakage current | IGSS | 100 | nA | VGS=20 V |
| Drain-source leakage current | IDSS | 1 | A | VDS=100 V, VGS=0 V |
| Continuous drain current | ID | 60 | A | TC=25 C |
| Pulsed drain current | ID, pulse | 180 | A | TC=25 C |
| Continuous diode forward current | IS | 60 | A | TC=25 C |
| Diode pulsed current | IS, Pulse | 180 | A | TC=25 C |
| Power dissipation | PD | 107 | W | TC=25 C |
| Single pulsed avalanche energy | EAS | 65 | mJ | VDD=30 V,VGS=10 V, L=0.3 mH, starting Tj=25 C |
| Operation and storage temperature | TstgTj | -55 to 150 | C | |
| Thermal resistance, junction-case | RJC | 1.17 | C/W | |
| Thermal resistance, junction-ambient | RJA | 62 | C/W | Device mounted on 1 in FR-4 board with 2oz. Copper, still air environment with Ta=25 C. |
| Total gate charge | Qg | 28.9 | nC | VGS=10 V, VDS=50 V, ID=25 A |
| Input capacitance | Ciss | 1998 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Output capacitance | Coss | 322 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Reverse transfer capacitance | Crss | 7.1 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Turn-on delay time | td(on) | 22.1 | ns | VGS=10 V, VDS=50 V, RG=2 , ID=25 A |
| Rise time | tr | 5.2 | ns | VGS=10 V, VDS=50 V, RG=2 , ID=25 A |
| Turn-off delay time | td(off) | 44 | ns | VGS=10 V, VDS=50 V, RG=2 , ID=25 A |
| Fall time | tf | 8.4 | ns | VGS=10 V, VDS=50 V, RG=2 , ID=25 A |
| Diode forward voltage | VSD | 1.3 | V | IS=30 A, VGS=0 V |
| Reverse recovery time | trr | 103 | ns | VR=50 V, IS=25 A, di/dt=100 A/s |
| Reverse recovery charge | Qrr | 379 | nC | VR=50 V, IS=25 A, di/dt=100 A/s |
| Peak reverse recovery current | Irrm | 6.4 | A | VR=50 V, IS=25 A, di/dt=100 A/s |
| Product Name | SFG10S10PF | |||
| Package Marking | SFG10S10P |
Package Information (TO220-J)
| Symbol | Min (mm) | Nom (mm) | Max (mm) |
|---|---|---|---|
| A | 4.40 | 4.50 | 4.60 |
| A1 | 1.27 | 1.30 | 1.33 |
| A2 | 2.30 | 2.40 | 2.50 |
| b | 0.70 | - | 0.90 |
| b1 | 1.27 | - | 1.40 |
| c | 0.45 | 0.50 | 0.60 |
| D | 15.30 | 15.70 | 16.10 |
| D1 | 9.10 | 9.20 | 9.30 |
| D2 | 13.10 | - | 13.70 |
| E | 9.70 | 9.90 | 10.20 |
| E1 | 7.80 | 8.00 | 8.20 |
| e | 2.54 BSC | ||
| e1 | 5.08 BSC | ||
| H1 | 6.30 | 6.50 | 6.70 |
| L | 12.78 | 13.08 | 13.38 |
| L1 | - | - | 3.50 |
| L2 | 4.60 REF | ||
| P | 3.55 | 3.60 | 3.65 |
| Q | 2.73 | - | 2.87 |
| 1 | 1 | 3 | 5 |
Ordering Information
| Package Type | Units/Tube | Tubes / Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
|---|---|---|---|---|---|
| TO220-J | 50 | 20 | 1000 | 5 | 5000 |
2103242012_ORIENTAL-SEMI-SFG10S10PF_C2762911.pdf
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