Low on resistance Power MOSFET ORIENTAL SEMI OSG55R140HF ideal for PC power telecom and UPS applications
Key Attributes
Model Number:
OSG55R140HF
Product Custom Attributes
Drain To Source Voltage:
550V
Current - Continuous Drain(Id):
23A
Operating Temperature -:
-55℃~+150℃
RDS(on):
140mΩ@10V,11.5A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
4.14pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
151W
Gate Charge(Qg):
24.1nC@10V
Mfr. Part #:
OSG55R140HF
Package:
TO-247
Product Description
Product Overview
The Oriental Semiconductor OSG55R140HF is a high-voltage N-Channel Power MOSFET from the GreenMOS Generic series, engineered with charge balance technology. It offers outstanding low on-resistance and reduced gate charge, minimizing conduction and switching losses for superior performance. This MOSFET is optimized for high power density applications requiring the highest efficiency standards, making it suitable for PC power, LED lighting, telecom power, server power, EV chargers, and solar/UPS systems.
Product Attributes
- Brand: Oriental Semiconductor
- Product Series: GreenMOS Generic
- Technology: Charge Balance Technology
- RoHS/Pb Free: Yes
- Halogen Free: Yes
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 550 | V | VGS=0 V, ID=250 uA |
| Gate threshold voltage | VGS(th) | 2 - 4 | V | VDS=VGS, ID=250 uA |
| Drain-source on-state resistance | RDS(ON) | 0.11 - 0.14 | VGS=10 V, ID=11.5 A | |
| Gate-source leakage current | IGSS | -100 - 100 | nA | VGS=30 V |
| Drain-source leakage current | IDSS | 1 | A | VDS=550 V, VGS=0 V |
| Continuous drain current (TC=25 C) | ID | 23 | A | TC=25 C |
| Continuous drain current (TC=100 C) | ID | 14.5 | A | TC=100 C |
| Pulsed drain current (TC=25 C) | ID, pulse | 69 | A | TC=25 C |
| Continuous diode forward current (TC=25 C) | IS | 23 | A | TC=25 C |
| Diode pulsed current (TC=25 C) | IS, pulse | 69 | A | TC=25 C |
| Power dissipation (TC=25 C) | PD | 151 | W | TC=25 C |
| Single pulsed avalanche energy | EAS | 330 | mJ | VDD=100 V, VGS=10 V, L=80 mH, starting Tj=25 C |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0480 V |
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0480 V, ISDID |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | C | |
| Thermal resistance, junction-case | RJC | 0.82 | C/W | |
| Thermal resistance, junction-ambient | RJA | 62 | C/W | Mounted on 1 in FR-4 board with 2oz. Copper, still air, Ta=25 C |
| Input capacitance | Ciss | 1408.8 | pF | VGS=0 V, VDS=50 V, =1 MHz |
| Output capacitance | Coss | 151.2 | pF | VGS=0 V, VDS=50 V, =1 MHz |
| Reverse transfer capacitance | Crss | 4.14 | pF | VGS=0 V, VDS=50 V, =1 MHz |
| Turn-on delay time | td(on) | 40.5 | ns | VGS=10 V, VDS=420 V, RG=25 , ID=23 A |
| Rise time | tr | 73.5 | ns | VGS=10 V, VDS=420 V, RG=25 , ID=23 A |
| Turn-off delay time | td(off) | 63.6 | ns | VGS=10 V, VDS=420 V, RG=25 , ID=23 A |
| Fall time | tf | 73.5 | ns | VGS=10 V, VDS=420 V, RG=25 , ID=23 A |
| Total gate charge | Qg | 24.1 | nC | VGS=10 V, VDS=420 V, ID=23 A |
| Gate-source charge | Qgs | 9 | nC | VGS=10 V, VDS=420 V, ID=23 A |
| Gate-drain charge | Qgd | 7.4 | nC | VGS=10 V, VDS=420 V, ID=23 A |
| Gate plateau voltage | Vplateau | 5.6 | V | VGS=10 V, VDS=420 V, ID=23 A |
| Diode forward voltage | VSD | 1.4 | V | IS=23 A, VGS=0 V |
| Reverse recovery time | trr | 372 | ns | VR=400 V, IS=23 A, di/dt=100 A/s |
| Reverse recovery charge | Qrr | 5.1 | C | VR=400 V, IS=23 A, di/dt=100 A/s |
| Peak reverse recovery current | Irrm | 25.6 | A | VR=400 V, IS=23 A, di/dt=100 A/s |
| Product Name | OSG55R140HF | |||
| Package Marking | OSG55R140H | |||
| Package Type | TO247 | |||
| TO247-C Dimensions (mm) | A | 4.80 - 5.20 | mm | |
| A1 | 2.21 - 2.59 | mm | ||
| A2 | 1.85 - 2.15 | mm | ||
| b | 1.11 - 1.36 | mm | ||
| b2 | 1.91 - 2.21 | mm | ||
| b4 | 2.91 - 3.21 | mm | ||
| c | 0.51 - 0.75 | mm | ||
| D | 20.80 - 21.30 | mm | ||
| D1 | 16.25 - 16.85 | mm | ||
| E | 15.50 - 16.10 | mm | ||
| E1 | 13.00 - 13.60 | mm | ||
| E2 | 4.80 - 5.20 | mm | ||
| E3 | 2.30 - 2.70 | mm | ||
| e | 5.44 | BSC | ||
| L | 19.82 - 20.22 | mm | ||
| L1 | - 4.30 | mm | ||
| P | 3.40 - 3.80 | mm | ||
| P1 | - 7.30 | mm | ||
| S | 6.15 | BSC | ||
| TO247-J Dimensions (mm) | A | 4.90 - 5.20 | mm | |
| A1 | 2.31 - 2.59 | mm | ||
| A2 | 1.90 - 2.15 | mm | ||
| b | 1.16 - 1.36 | mm | ||
| b2 | 1.96 - 2.21 | mm | ||
| b4 | 2.96 - 3.21 | mm | ||
| c | 0.59 - 0.75 | mm | ||
| D | 20.90 - 21.30 | mm | ||
| D1 | 16.25 - 16.85 | mm | ||
| E | 15.70 - 16.10 | mm | ||
| E1 | 13.10 - 13.60 | mm | ||
| E2 | 4.40 - 5.20 | mm | ||
| E3 | 2.40 - 2.70 | mm | ||
| e | 5.436 | BSC | ||
| L | 19.80 - 20.22 | mm | ||
| L1 | - 4.30 | mm | ||
| P | 3.40 - 3.80 | mm | ||
| P1 | 7.00 | mm | ||
| P2 | 2.40 - 7.30 | mm | ||
| Q | 5.60 | mm | ||
| S | 6.05 - 7.30 | mm | ||
| T | 0.80 | mm | ||
| U | 6.00 | BSC |
2410121621_ORIENTAL-SEMI-OSG55R140HF_C708891.pdf
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